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Institution Date Title Author
臺大學術典藏 2018-09-10T07:09:30Z K-band Si/SiGe HBT MMIC amplifiers using lumped passive components with a micromachined structure L.-H. Lu; J.-S. Rieh; P. Bhattacharya; L. P. B. Kahehi; E. T. Croke; G. E. Ponchak; S. A. Alterovitz; LIANG-HUNG LU
臺大學術典藏 2018-09-10T07:09:29Z X- and Ku-band amplifiers based on Si/SiGe HBT’s and micromachined lumped components J.-S. Rieh; L.-H. Lu; L. P. B. Katehi; P. Bhattacharya; E. T. Croke; G. E. Ponchak; S. A. Alterovitz; LIANG-HUNG LU
臺大學術典藏 2018-09-10T03:50:56Z An X-band high-power amplifier using SiGe/Si HBT and lumped passive components Z. Ma; S. Mohammadi; L.-H. Lu; P. Bhattacharya; L. P. B. Katehi; S. A. Alterovitz; G. E. Ponchak; LIANG-HUNG LU
臺大學術典藏 2018-09-10T03:50:56Z SiGe power heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technology L.-H. Lu; S. Mohammadi; Z. Ma; G. E. Ponchak; S. A. Alterovitz; K. M. Strohm; J.-K. Luy; P. Bhattacharya; L. P. B. Katehi; LIANG-HUNG LU

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