臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
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Institution	Date	Title	Author
國立中山大學	2007	Nonvolatile Si/SiO2/Si3N4/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;J.Y. Chin;P.H. Yeh;L.W. Feng;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2006	A Novel Fabrication of Germanium Nanocrystal Embedded in Silicon-Oxygen-Nitride Layer	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;C.F. Weng;J.H. Shy;B.H. Tseng;T.Y. Tseng;S.M. Sze;C.Y. Chang
國立中山大學	2006	Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;S.M. Sze;C.Y. Chang
國立中山大學	2006	Electrical Enhancement of Solid Phase Crystallized Poly-Si Thin-Film Transistors with Fluorine Ion Implantation	C.H. Tu;T.C. Chang;P.T. Liu;C.H. Chen;C.Y. Yang;Y.C. Wu;H.C. Liu;L.T. Chang;C.C. Tsai;S.M. Sze;C.Y. Chang
國立中山大學	2005	A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide	T.C. Chang;S.T. Yan;Y.T. Chen;P.T. Liu;S.M. Sze
國立中山大學	2005	Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low voltage nonvotatile memeory technology	T.C. Chang;P.T. Liu;S.T. Yan;S.M. Sze
國立中山大學	2005	Memeory effect of oxide/ oxygen-incorporated silicon carbide/ oxide sandwiched structure	T.C. Chang;P.T. Liu;S.T. Yan;F.M. Yang;S.M. Sze
國立中山大學	2004	Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application	T.C. Chang;T.M. Tsai;P.T. Liu;S.T. Yan;Y.C. Chang;H. Aoki;S.M. Sze;T.Y. Tseng
國立中山大學	2004	A novel distributed charge storage with GeO2 nano-dots	T.C. Chang;S.T. Yan;P.T. Liu;C.H. Hsu;M.T. Tang;S.M. Sze
國立中山大學	2004	Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications	T.C. Chang;S.T. Yan;P.T. Liu;H. Aoki;S.M. Sze
國立中山大學	2004	Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integraged interconnect application	T.C. Chang;T.M. Tsai;P.T. Liu;Y.C. Chang;J. Aoki;S.M. Sze;T.Y. Tseng
國立中山大學	2004	Quasisuperlattice storage: A concept of multilevel charge stoage	T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;H.H. Wu;S.M. Sze
國立中山大學	2004	Leakage behavior of the quasi-superlattice stack for multilevel charge storage	T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;H.H. Wu;S.M. Sze
國立中山大學	2004	Quasisuperlattice storage: A concept of multilevel charge stoage	T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;H.H. Wu;S.M. Sze
國立中山大學	2004	A method of fabricating superior oxide/nitride/oxide gate stack	T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;S.H. Lin;S.M. Sze
國立中山大學	2004	A novel approach for fabricating germanium nanocrystals for nonvolatile memory application	T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;S.H. Lin;S.M. Sze
國立中山大學	2004	Study on SONOS nonvolatile memeory technology using high-density plasma chemical vapor deposition	T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;S.H. Lin;S.M. Sze
國立中山大學	2004	Memory effect of oxide/SiC:O/Oxide sandwidthed structures	T.C. Chang;S.T. Yan;F.M. Yang;P.T. Liu;S.M. Sze
國立中山大學	2003	Moisture-induced material instability of porous organosilicate glass	T.C. Chang;C.W. Chen;P.T. Liu;Y.S. Mor;H.M. Tsai;T.M. Tsai;S.T. Yan;C.H. Tu;T.Y. Tsing;S.M. Sze
國立中山大學	2003	Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications	P.T. Liu;T.C. Chang;T.M. Tasi;Z.W. Chen;B.C. Chen;S.M. Sze
國立中山大學	2003	Electrical transport phenomena in aromatic hydrocarbon polymer	P.T. Liu;T.C. Chang;S.T. Yan;C.H. Li;S.M. Sze
國立中山大學	2001	1.55 um and Infrared Band Photoresponsivity of Schottky Barrier Porous Silicon Photodetector	M.K. Lee; C.H. Chu; Y.H. Wang; S.M. Sze
國立中山大學	1999	Co-Spttered Ru-Ti Alloy Electrodes for DRAM Applications	R.H. Hong;D.S. Wuu;L.H. Wu;S.C. Wei;S.H. Chan;C.C. Leu;T.Y. Huang;S.M. Sze;M.K. Lee
國立成功大學	1996	ULSI Technology	張俊彥; S. M. Sze

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