臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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"sanyal i"

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Institution	Date	Title	Author
臺大學術典藏	2021-09-02T00:04:20Z	Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-LgProduct of 13.9 GHz-μm	Tu P.-T;Sanyal I;Yeh P.-C;Lee H.-Y;Lee L.-H;Wu C.-I;Chyi J.-I.; Tu P.-T; Sanyal I; Yeh P.-C; Lee H.-Y; Lee L.-H; Wu C.-I; Chyi J.-I.; CHIH-I WU
臺大學術典藏	2021-09-02T00:04:20Z	Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-LgProduct of 13.9 GHz-μm	Tu P.-T;Sanyal I;Yeh P.-C;Lee H.-Y;Lee L.-H;Wu C.-I;Chyi J.-I.; Tu P.-T; Sanyal I; Yeh P.-C; Lee H.-Y; Lee L.-H; Wu C.-I; Chyi J.-I.; CHIH-I WU
臺大學術典藏	2021-09-02T00:03:38Z	High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer	Luo Y.J;Sanyal I;Tzeng W.-C;Ho Y.-L;Chang Y.-C;Hsu C.-C;Chyi J.-I;Wu C.-H.; Luo Y.J; Sanyal I; Tzeng W.-C; Ho Y.-L; Chang Y.-C; Hsu C.-C; Chyi J.-I; Wu C.-H.; CHAO-HSIN WU
臺大學術典藏	2021-09-02T00:03:38Z	High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer	Luo Y.J;Sanyal I;Tzeng W.-C;Ho Y.-L;Chang Y.-C;Hsu C.-C;Chyi J.-I;Wu C.-H.; Luo Y.J; Sanyal I; Tzeng W.-C; Ho Y.-L; Chang Y.-C; Hsu C.-C; Chyi J.-I; Wu C.-H.; CHAO-HSIN WU

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