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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
臺大學術典藏 2019-12-27T07:49:53Z Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric Ng, K.; Bude, J.; MINGHWEI HONG; Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.
臺大學術典藏 2019-12-27T07:49:53Z Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric Ng, K.; Bude, J.; MINGHWEI HONG; Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.
臺大學術典藏 2019-12-27T07:49:51Z Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:51Z Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:51Z GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition Ye, P.D.;Wilk, G.D.;Kwo, J.;Yang, B.;Gossmann, H.-J.L.;Frei, M.;Chu, S.N.G.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.K.;Bude, J.; Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:51Z GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition Ye, P.D.;Wilk, G.D.;Kwo, J.;Yang, B.;Gossmann, H.-J.L.;Frei, M.;Chu, S.N.G.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.K.;Bude, J.; Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:50Z GaAs-based metal-oxide semiconductor field-effect transistors with Al 2 O 3 gate dielectrics grown by atomic layer deposition Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:51:58Z GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:34Z Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:34Z Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG

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