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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:43:40Z |
Comparative study of Schottky diode characteristics in Ni, Ta and Ni/Ta metal contact schemes on n-GaN
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Chen, GL; Chang, FC; Chuang, WC; Chung, HM; Shen, KC; Chen, WH; Lee, MC; Chen, NK |
| 國立交通大學 |
2014-12-08T15:42:52Z |
Thermal stability study of Ni/Ta n-GaN Schottky contacts
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Chen, GL; Chang, FC; Shen, KC; Ou, J; Chen, WH; Lee, MC; Chen, WK; Jou, MJ; Huang, CN |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Characteristics of p-type GaN films doped with isoelectronic indium atoms
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Chang, FC; Shen, KC; Chung, HM; Lee, MC; Chen, WH; Chen, WK |
| 國立成功大學 |
2011-12 |
Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance
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Huang, SC; Shen, KC; Wuu, DS; Tu, PM; Kuo, HC; Tu, CC; Horng, RH |
Showing items 1-4 of 4 (1 Page(s) Totally)
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