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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:01:07Z |
GaN growth on Si(111) using simultaneous AlN/alpha-Si3N4 buffer structure
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Chang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen |
| 國立交通大學 |
2014-12-16T06:15:50Z |
Method for forming III-nitrides semiconductor epilayer on the semiconductor substrate
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Chang, Chun-Yen; Yang, Tsung-Hsi; Shen, Shih-Guo |
| 國立交通大學 |
2014-12-08T15:11:14Z |
GaN growth on Si(111) using simultaneous AlN/alpha-Si(3)N(4) buffer structure
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Chang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen |
| 國立交通大學 |
2014-12-08T15:09:46Z |
Growth of free-standing GaN layer on Si(111) substrate
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Yang, Tsung Hsi; Ku, Jui Tai; Chang, Jet-Rung; Shen, Shih-Guo; Chen, Yi-Cheng; Wong, Yuen Yee; Chou, Wu Ching; Chen, Chien-Ying; Chang, Chun-Yen |
Showing items 1-4 of 4 (1 Page(s) Totally)
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