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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-03T06:44:26Z |
Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate
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Shen, Yi-Siang; Wang, Wei-Kai; Horng, Ray-Hua |
| 國立交通大學 |
2018-08-21T05:53:58Z |
1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment
|
Yeh, Chih-Tung; Wang, Wei-Kai; Shen, Yi-Siang; Horng, Ray-Hua |
| 國立交通大學 |
2017-04-21T06:49:10Z |
1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment
|
Yeh, Chih-Tung; Wang, Wei-Kai; Shen, Yi-Siang; Horng, Ray-Hua |
| 大葉大學 |
2017-03 |
Characterizations of Metal-Oxide-Semiconductor Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate Grown on Sapphire Substrate
|
SHEN, YI-SIANG;Wang, Wei-Kai;HORNG, RAY-HUA |
| 國立成功大學 |
2016-05 |
1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment
|
Yeh, Chih-Tung; Wang, Wei-Kai; Shen, Yi-Siang; Horng, Ray-Hua |
| 大葉大學 |
2016-04 |
1.48-kV enhancement-mode AlGaN/GaN high electron mobility transistors fabricated on 6-in silicon by using fluoride-based plasma treatment
|
Yeh, Chih-Tung;Wang, Wei-Kai;Shen, Yi-Siang;Horng, Ray-Hua |
Showing items 1-6 of 6 (1 Page(s) Totally)
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