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Showing items 51-67 of 67 (3 Page(s) Totally)
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| 國立成功大學 |
2012-10 |
GaN-Based Miniaturized Cyan Light-Emitting Diodes on a Patterned Sapphire Substrate With Improved Fiber Coupling for Very High-Speed Plastic Optical Fiber Communication
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Wun, Jhih-Min; Lin, Che-Wei; Chen, Wei; Sheu, J. -K.; Lin, Ching-Liang; Li, Yun-Li; Bowers, John E.; Shi, Jin-Wei; Vinogradov, Juri; Kruglov, Roman; Ziemann, Olaf |
| 國立成功大學 |
2012-09-10 |
Mn-doped GaN as photoelectrodes for the photoelectrolysis of water under visible light
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Liu, Shu-Yen; Sheu, J. K.; Lin, Yu-Chuan; Tu, S. J.; Huang, F. W.; Lee, M. L.; Lai, W. C. |
| 國立成功大學 |
2012-03-12 |
Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation
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Liu, Shu-Yen; Sheu, J. K.; Lee, M. L.; Lin, Yu-Chuan; Tu, S. J.; Huang, F. W.; Lai, W. C. |
| 國立成功大學 |
2011-11-01 |
Investigation of the Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using a Dynamic Measurement Technique
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Shi, J. -W.; Kuo, F. -M.; Lin, Che-Wei; Chen, Wei; Yan, L. -J.; Sheu, J. -K. |
| 國立成功大學 |
2011-11 |
Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts
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Liu, Shu-Yen; Lin, Yu-Chuan; Ye, Jhao-Cheng; Tu, S. J.; Huang, F. W.; Lee, M. L.; Lai, W. C.; Sheu, J. K. |
| 國立成功大學 |
2011-10 |
Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers
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Sheu, J. K.; Tu, S. J.; Lee, M. L.; Yeh, Y. H.; Yang, C. C.; Huang, F. W.; Lai, W. C.; Chen, C. W.; Chi, G. C. |
| 國立成功大學 |
2011-07-15 |
Effect of Growth Pressure of Undoped GaN Layer on the ESD Characteristics of GaN-Based LEDs Grown on Patterned Sapphire
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Jang, C. H.; Sheu, J. K.; Chang, S. J.; Lee, M. L.; Yang, C. C.; Tu, S. J.; Huang, F. W.; Hsu, C. K. |
| 國立成功大學 |
2011-06-20 |
High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer
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Lee, Ming-Lun; Mue, T. S.; Huang, F. W.; Yang, J. H.; Sheu, J. K. |
| 國立成功大學 |
2011-05-03 |
Influence of modulated fields on the Landau level properties of graphene
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Ou, Y. C.; Sheu, J. K.; Chiu, Y. H.; Chen, R. B.; Lin, M. F. |
| 國立成功大學 |
2011-04 |
Improved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substrates
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Yang, C. C.; Sheu, J. K.; Kuo, C. H.; Huang, M. S.; Tu, S. J.; Huang, F. W.; Lee, M. L.; Yeh, Yu-Hsiang; Liang, X. W.; Lai, W. C. |
| 實踐大學 |
2009 |
GaN-Based Power Flip-Chip LEDs With Cu Submount
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Chang, S.J.;Chen, W.S.;Shei, S.C.;Shen, C.F.;Ko, T.K.;Tsai, J.M.;Lai, W.C.;Sheu, J.K.;Lin, A.J.;Hung, S.C. |
| 國立臺灣大學 |
2008-02 |
High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures
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Shi, J.-W.; Sheu, J.-K.; Chen, C.-H.; Lin, G.-R.; Lai, W.-C. |
| 國立臺灣大學 |
2008 |
High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures
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Shi, J.-W.; Sheu, J.-K.; Chen, C.-H.; Lin, G.-R.; Lai, W.-C. |
| 國立成功大學 |
2003-08 |
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers
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Tu, Ru-Chin; Tun, Chun-Ju; Pan, Chun-Ju; Liu, Hai-Ping; Tsai, Ching-En; Sheu, J. K.; Chuo, Chang-Cheng; Wang, Te-Chung; Chi, Gou-Chung; Chen, In-Gann |
| 國立成功大學 |
2003-04-28 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
1999-04-19 |
High-transparency Ni/Au ohmic contact to p-type GaN
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Sheu, J. K.; Su, Yan-Kuin; Chi, Gou-Chung; Koh, P. L.; Jou, M. J.; Chang, C. M.; Liu, C. C.; Hung, W. C. |
| 國立成功大學 |
1998-06-22 |
Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN
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Sheu, J. K.; Su, Yan-Kuin; Chi, G. C.; Jou, M. J.; Chang, C. M. |
Showing items 51-67 of 67 (3 Page(s) Totally)
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