|
???tair.name??? >
???browser.page.title.author???
|
"shih ps"???jsp.browse.items-by-author.description???
Showing items 1-22 of 22 (1 Page(s) Totally) 1 View [10|25|50] records per page
國立交通大學 |
2014-12-08T15:48:43Z |
Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing
|
Chen, DR; Luo, JS; Lin, WT; Chang, CY; Shih, PS |
國立交通大學 |
2014-12-08T15:46:32Z |
Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees C
|
Luo, JS; Lin, WT; Chang, CY; Shih, PS |
國立交通大學 |
2014-12-08T15:46:22Z |
Characterization of Si1-x-yGexCy films grown by C+ implantation and subsequent pulsed laser annealing
|
Luo, JS; Lin, WT; Chang, CY; Shih, PS; Pan, FM; Chang, TC |
國立交通大學 |
2014-12-08T15:46:21Z |
Interfacial reactions of Co/Si0.76Ge0.24 and Co(Si0.76Ge0.24)/Si0.76Ge0.24 by pulsed KrF laser annealing
|
Luo, JS; Hang, YL; Lin, WT; Chang, CY; Shih, PS |
國立交通大學 |
2014-12-08T15:46:20Z |
A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition
|
Shih, PS; Chang, CY; Chang, TC; Huang, TY; Peng, DZ; Yeh, CF |
國立交通大學 |
2014-12-08T15:46:02Z |
Effects of Mo-free C40Ti(Si1-xGex)(2) precursors and the thickness of an interposed Mo layer on the enhanced formation of C54Ti(Si1-xGex)(2)
|
Luo, JS; Huang, JC; Lin, WT; Chang, CY; Shih, PS |
國立交通大學 |
2014-12-08T15:45:53Z |
Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy
|
Luo, JS; Lin, WT; Chang, CY; Shih, PS; Pan, FM |
國立交通大學 |
2014-12-08T15:45:46Z |
The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor
|
Chang, CY; Lee, YS; Huang, TY; Shih, PS; Lin, CW |
國立交通大學 |
2014-12-08T15:45:19Z |
Improvements of amorphous-silicon inverted-staggered thin-film transistors using high-temperature-deposited Al gate with chemical mechanical polishing
|
Shih, PS; Chang, TC; Liang, CY; Huang, TY; Chang, CY |
國立交通大學 |
2014-12-08T15:45:14Z |
Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealing
|
Luo, JS; Lin, WT; Chang, CY; Shih, PS |
國立交通大學 |
2014-12-08T15:45:14Z |
Pulsed KrF laser annealing of Mo/Si0.76Ge0.24
|
Luo, JS; Lin, WT; Chang, CY; Shih, PS; Chang, TC |
國立交通大學 |
2014-12-08T15:45:10Z |
Dimensional effects on the drain current of n- and p-channel polycrystalline silicon thin film transistors
|
Shih, PS; Zan, HW; Chang, TC; Huang, TY; Chang, CY |
國立交通大學 |
2014-12-08T15:44:56Z |
Dimensional effects on the reliability of polycrystalline silicon thin-film transistors
|
Zan, HW; Shih, PS; Chang, TC; Chang, CY |
國立交通大學 |
2014-12-08T15:44:47Z |
Characterization and reliability of lightly-doped-drain polysilicon thin-film transistors with oxide sidewall spacer formed by one-step selective liquid phase deposition
|
Shih, PS; Chang, TC; Huang, TY; Yeh, CF; Chang, CY |
國立交通大學 |
2014-12-08T15:44:46Z |
Effects of an interposed Mo layer on the interfacial reactions of Ti/Si0.76Ge0.24 by rapid thermal annealing and pulsed laser annealing
|
Huang, JC; Luo, JS; Lin, WT; Chang, CY; Shih, PS |
國立交通大學 |
2014-12-08T15:41:56Z |
A W-spacer GOLD TFT with high performance and high reliability
|
Zan, HW; Peng, DZ; Shih, PS; Chang, TC; Liu, PT; Chang, CY |
國立交通大學 |
2014-12-08T15:41:56Z |
Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors
|
Peng, DZ; Zan, HW; Shih, PS; Chang, TC; Lin, CW; Chang, CY |
國立交通大學 |
2014-12-08T15:41:38Z |
Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain
|
Peng, DZ; Chang, TC; Shih, PS; Zan, HW; Huang, TY; Chang, CY; Liu, PT |
國立交通大學 |
2014-12-08T15:41:27Z |
Analysis of narrow width effects in polycrystalline silicon thin film transistors
|
Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Huang, TY; Chang, CY |
國立交通大學 |
2014-12-08T15:40:35Z |
A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain
|
Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
國立交通大學 |
2014-12-08T15:39:55Z |
Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drain
|
Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
國立交通大學 |
2014-12-08T15:27:13Z |
High performance thin-film transistors with low-high-low band gap engineering
|
Chang, CY; Lee, YS; Shih, PS; Lin, CW |
Showing items 1-22 of 22 (1 Page(s) Totally) 1 View [10|25|50] records per page
|