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Showing items 1-18 of 18 (1 Page(s) Totally)
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| 臺大學術典藏 |
2021-08-05T02:41:00Z |
HR-STEM investigation of atomic lattice defects in different types of η precipitates in creep-age forming Al–Zn–Mg–Cu aluminium alloy
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Chung T.-F;Yang Y.-L;Tai C.-L;Shiojiri M;Hsiao C.-N;Tsao C.-S;Li W.-C;Shi Z;Lin J;Chena H.-R;Yang J.-R.; Chung T.-F; JER-REN YANG et al. |
| 臺大學術典藏 |
2020-05-12T02:52:12Z |
Nanoscale GaN Epilayer Grown by Atomic Layer Annealing and Epitaxy at Low Temperature
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MIIN-JANG CHEN;Chen, M.-J.;Lin, H.-C.;Shiojiri, M.;Shyue, J.-J.;Cheng, P.-H.;Yin, Y.-T.;Lee, W.-H.; Lee, W.-H.; Yin, Y.-T.; Cheng, P.-H.; Shyue, J.-J.; Shiojiri, M.; Lin, H.-C.; Chen, M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2019-11-27T01:34:44Z |
Nanoscale GaN Epilayer Grown by Atomic Layer Annealing and Epitaxy at Low Temperature
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HSIN-CHIH LIN;Chen M.-J.;Lin H.-C.;Shiojiri M.;Shyue J.-J.;Cheng P.-H.;Yin Y.-T.;Lee W.-H.; Lee W.-H.; Yin Y.-T.; Cheng P.-H.; Shyue J.-J.; Shiojiri M.; Lin H.-C.; Chen M.-J.; HSIN-CHIH LIN |
| 國立臺灣科技大學 |
2015 |
Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
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Shih, H.-Y.;Shiojiri, M.;Chen, C.-H.;Yu, S.-F.;Ko, C.-T.;Yang, J.-R.;Lin, R.-M.;Chen, M.-J. |
| 國立臺灣大學 |
2011 |
White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias
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Chen, H.C.; Chen, M.J.; Huang, Y.H.; Sun, W.C.; Li, W.C.; Yang, J.R.; Kuan, H.; Shiojiri, M. |
| 國立臺灣大學 |
2011 |
STRUCTURAL INVESTIGATION OF n-ZnO/p-GaN ULTRAVIOLET LIGHT-EMITTING DIODES GROWN BY ATOMIC LAYER DEPOSITION
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Li, W.C.; Tsai, H.L.; Chen, H.C.; Wu, M.K.; Chen, H.R.; Chen, M.J.; Yang, J.R.; Shiojiri, M. |
| 國立臺灣大學 |
2011 |
P-Type ZnO:P Films Fabricated by Atomic Layer Deposition and Thermal Processing
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Shih, Y.T.; Chien, J.F.; Chen, M.J.; Yang, J.R.; Shiojiri, M. |
| 國立臺灣大學 |
2010 |
Structure and stimulated emission of a high-quality zinc oxide epilayer grown by atomic layer deposition on the sapphire substrate
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Chen, H.C.; Chen, M.J.; Liu, T.C.; Yang, J.R.; Shiojiri, M. |
| 國立臺灣大學 |
2010 |
ZnO-based heterojunction light-emitting diodes on p-SiC(4H) grown by atomic layer deposition
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Shih, Y.T.; Wu, M.K.; Chen, M.J.; Cheng, Y.C.; Yang, J.R.; Shiojiri, M. |
| 國立臺灣大學 |
2010 |
Electron microscopy investigations of V defects in multiple InGaN/GaN quantum wells and InGaN quantum dots
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Yang, J.R.; Li, W.C.; Tsai, H.L.; Hsu, J.T.; Shiojiri, M. |
| 國立臺灣大學 |
2010 |
Stimulated Emission in Highly (0001)-Oriented ZnO Films Grown by Atomic Layer Deposition on the Amorphous Glass Substrates
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Shih, Y.T.; Chiu, C.Y.; Chang, C.W.; Yang, J.R.; Shiojiri, M.; Chen, M.J. |
| 臺大學術典藏 |
2010 |
Electron microscopy investigations of V defects in multiple InGaN/GaN quantum wells and InGaN quantum dots
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YangJR; Shiojiri, M.; Hsu, J.T.; Li, W.C.; Tsai, H.L.; Yang, J.R.; Yang, J.R.; Li, W.C.; Tsai, H.L.; Hsu, J.T.; Shiojiri, M.Y |
| 國立臺灣大學 |
2007-11 |
Electron Microscopy Studies of GaN-Based violet laser diodes
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Shiojiri, M.; Yang, J. R. |
| 國立臺灣大學 |
2007 |
Observation of high density INGaN quantum dots
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Tsai, H. L.; Wang, T. Y.; Yang, J. R.; Wang, T. C.; Hsu, J. T.; Shiojiri, M. |
| 國立臺灣大學 |
2007 |
Structural analysis of strained p-type AlGaN/GaN superlattice
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Tsai, H. L.; Wang, T. Y.; Yang, J. R.; Chuo, C. C.; Hsu, J. T.; Ceh, M.; Shiojiri, M. |
| 國立臺灣大學 |
2006 |
Structural and compositional analyses of a strained AlGaN/GaN superlattice
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Shiojiri, M.; M.. Ceh , Sturm, S.; Chuo, C. C.; Hsu, J. T.; Yang, J. R.; Saijo, H. |
| 國立臺灣大學 |
2006 |
Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers
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Shiojiri, M.; Chuo, C. C.; Hsu, J. T.; Yang, J. R.; Saijo, H. |
| 國立臺灣大學 |
2005 |
Determination of thickness and lattice distortion for the individual layer of strained AlGaN/GaN superlattice by high-angle annular dark-field scanning transmission electron microscopy
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Shiojiri, M.; Ceh, M.; Sturm, S.; Chuo, C.C.; Hsu, J. T.; Yang, J. R.; Sajio, H. |
Showing items 1-18 of 18 (1 Page(s) Totally)
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