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Showing items 1-36 of 36 (1 Page(s) Totally)
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Institution	Date	Title	Author
國立高雄師範大學	2013	Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface	Jung-Hui Tsai;Jian-Kai Liou;Chun-Chia Chen;Po-Cheng Chou;Shiou-Ying Cheng;Rong-Chau Liu;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學	2009-11	Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors	Wen-Chau Liu; Ghun-Wei Ku; Der-Feng Guo; Jung-Hui Tsai; Wen-Shiung Lour; Shiou-Ying Cheng; Chi-Jhung Lee; Tzu-Pin Chen
國立高雄師範大學	2009	Effect of emitter ledge thickness on InGaP/GaAs heterojunction bipolar transistors	Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Ghun-Wei Ku;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	SiO2-passivation based hydrogen gas detector	Jung-Hui Tsai;Chung-Fu Chang;Huey-Ing Chen;Kun-Wei Lin;Shiou-Ying Cheng;Jung-Hui Tsai;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	On an InP/InGaAs heterobipolar transistor with an InAlGaAs/InP step-graded heterostructure collector	Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Kun-Wei Lin;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	High performance heterostructure transistor with graded-doped sheets	Jung-Hui Tsai;Li-Yang Chen;Chien-Chang Huang;Shiou-Ying Cheng;Kun-Wei Lin;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學	2008-12-09	Effect of Emitter Ledge Thickness on InGaP ∕ GaAs Heterojunction Bipolar Transistors	Tzu-Pin Chen; Chi-Jhung Lee; Shiou-Ying Cheng; Wen-Shiung Lour; Jung-Hui Tsai; Der-Feng Guo; Ghun-Wei Ku; Wen-Chau Liu
國立高雄師範大學	2008	Effect of non-annealed Ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor	Jung-Hui Tsai;Li-Yang Chen;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Tsung-Han Tsai;Tzu-Pin Chen;Yi-Chun Liu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2008	Influence of emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors	Jung-Hui Tsai;Kuei-Yi Chu;Shiou-Ying Cheng;Tzu-Pin Chen;Li-Yang Chen;Tsung-Han Tsai;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學	2008	Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor	Li-Yang Chen; Shiou-Ying Cheng; Wen-Shiung Lour; Jung-Hui Tsai; Der-Feng Guo; Tsung-Han Tsai; Tzu-Pin Chen; Yi-Chun Liu; Wen-Chau Liu
國立高雄師範大學	2007	Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors	Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Shiou-Ying Cheng;Der-Feng Guo;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	A New PT-Oxide-InALP-Based Schottky Diode Hydrogen Sensor	Jung-Hui Tsai;Yan-Ying Tsai;Shiou-Ying Cheng;Der-Feng Guo;Huey-Ing Chen;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Improved performance of a composite passivate heterojunction bipolar transistor (HBT)	Jung-Hui Tsai;Ssu-Yi Fu;Tzu-Pin Chen;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Sulphur passivation on an InGaP/InGaAs/GaAs Pseudomorphic high electron mobility transistor (PHEMT)	Jung-Hui Tsai;Po-Hsien Lai;Yi-Wen Huang;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學	2006	Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor	Tzu-Pin Chen;Ssu-I Fu;Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Shiou-Ying Cheng;Wen-Chau Liu
義守大學	2004	Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)	Chun-Yuan Chen ; Chii-Maw Uang ; Shiou-Ying Cheng ; Hung-Ming Chuang ; Ssu-I Fu ; Ching-Hsiu Tsai ; Chi-Yuan Chang ; Wen-Chau Liu
國立高雄師範大學	2001	Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures	Jung-Hui Tsai;W. C. Wang;His-Jen Pan;Kuo-Hui Yu;Kun-Wei Lin;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2001	Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor	Jung-Hui Tsai;Kuo-Hui Yu;Kun-Wei Lin;Chin-Chuan Cheng;Wen-Lung Chan;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2001	A new wide voltage operation regime double heterojunction bipolar transistor	Jung-Hui Tsai;Shiou-Ying Cheng;His-Jen Pan;Shun-Ching Feng;Kuo-Hui Yu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1999	Superlatticed negative differential-resistance heterojunction bipolar transistor	Jung-Hui Tsai;Shiou-Ying Cheng;Po-Hung Lin;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1999	Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)	Jung-Hui Tsai;Shiou-Ying Cheng;Wen-Lung Chang;Hsi-Jen Pan;Yung-Hsin Shie;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1998	Functional heterostructure-emitter bipolar transistor (HEBT) with graded-confinement and pseudomorphic-base structure	Jung-Hui Tsai;Shiou-Ying Cheng;Hui-Jung Shih;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1998	An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor (HEBT)	Jung-Hui Tsai;Shiou-Ying Cheng;Lih-Wen Laih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝
國立高雄師範大學	1998	Investigation of AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT)	Jung-Hui Tsai;Po-Hung Lin;Shiou-Ying Cheng;Wen-Lung Chang;Hsi-Jen Pan;Yung-Hsin Shie;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1998	Investigation of GaAs-based heterostructure-emitter-confinement bipolar transistors (HECBT's)	Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;W. L. Chang; 蔡榮輝
國立高雄師範大學	1997	Investigation of step-doped channel heterostructure field-effect transistor	Jung-Hui Tsai;Lih-Wen Laih;Cheng-Zu Wu;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1997	InGaP/GaAs Superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)	Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Po-Hung Lin;Jing-Yuh Chen;Wei-Chou Wang; 蔡榮輝
國立高雄師範大學	1997	Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure for multiple-valued logic applications	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Cheng-Zu Wu;Shiou-Ying Cheng; 蔡榮輝
國立高雄師範大學	1997	Regenerative switching phenomenon of a graded-AlxGa1-xAs/InGaAs/GaAs heterostructure	Jung-Hui Tsai;Hui-Jung Shih;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1997	Modeling and analysis of heterostructure-emitter and heterostructure-base transistors (HEHBT’s)	Jung-Hui Tsai;Shiou-Ying Cheng;Po-Hung Lin;Wei-Chou Wang;Jing-Yuh Chen;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1997	A Novel Heterostructure-Emitter and Heterostructure-Base Transistor (HEHBT)	Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝
國立高雄師範大學	1997	Multiple Negative-Differential-Resistance (MNDR) of a Graded-AlxGa1-xAs/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic InGaAs/GaAs Base Structure	Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝
國立高雄師範大學	1996	AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)	Jung-Hui Tsai;Shiou-Ying Cheng;Lih-Wen Laih;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	Pseudomorphic step-doped-channel field-effect transistor (SDCFET)	Jung-Hui Tsai;Lih-Wen Laih;Cheng-Zu Wu;Kun-Wei Lin;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	InGaAs-GaAs Pseudomorphic Heterostructure Transistor Prepared by MOVPE	Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝
國立高雄師範大學	1996	A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter bipolar transistors (HEHBT's)	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;H. R. Chen;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝

Showing items 1-36 of 36 (1 Page(s) Totally)
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