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"shirota riichiro"的相關文件
顯示項目 1-15 / 15 (共1頁)
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| 國立交通大學 |
2019-08-02T02:15:26Z |
The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories
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Chiu, Yung-Yueh; Lin, Cheng-Han; Yang, Jhih-Siang; Yang, Bo-Jun; Aoki, Minoru; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro |
| 國立交通大學 |
2019-04-03T06:39:55Z |
Impact of String Pattern on the Threshold-Voltage Spread of Program-Inhibited Cell in NAND Flash
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Chiu, Yung-Yueh; Aoki, Minoru; Yano, Masaru; Shirota, Riichiro |
| 國立交通大學 |
2019-04-02T05:58:58Z |
Transconductance Distribution in Program/Erase Cycling of NAND Flash Memory Devices: a Statistical Investigation
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Chiu, Yung-Yueh; Lin, I-Chun; Chang, Kai-Chieh; Yang, Bo-Jun; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro |
| 國立交通大學 |
2018-08-21T05:53:13Z |
Evaluation of the Role of Deep Trap State Using Analytical Model in the Program/Erase Cycling of NAND Flash Memory and Its Process Dependence
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Yang, Bo-Jun; Wu, Yu-Ting; Chiu, Yung-Yueh; Kuo, Tse-Mien; Chang, Jung-Ho; Wang, Pin-Yao; Shirota, Riichiro |
| 國立交通大學 |
2015-12-02T02:59:29Z |
Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO2/Si3N4 interfacial transition layer
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Chiu, Yung-Yueh; Yang, Bo-Jun; Li, Fu-Hai; Chang, Ru-Wei; Sun, Wein-Town; Lo, Chun-Yuan; Hsu, Chia-Jung; Kuo, Chao-Wei; Shirota, Riichiro |
| 國立交通大學 |
2015-07-21T08:29:05Z |
New Method to Analyze the Shift of Floating Gate Charge and Generated Tunnel Oxide Trapped Charge Profile in NAND Flash Memory by Program/Erase Endurance
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Shirota, Riichiro; Yang, Bo-Jun; Chiu, Yung-Yueh; Chen, Hsuan-Tse; Ng, Seng-Fei; Wang, Pin-Yao; Chang, Jung-Ho; Kurachi, Ikuo |
| 國立交通大學 |
2014-12-16T06:15:02Z |
APPLICATION CIRCUIT AND OPERATION METHOD OF SEMICONDUCTOR DEVICE
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Shirota Riichiro; Watanabe Hiroshi |
| 國立交通大學 |
2014-12-12T02:37:48Z |
探討P 型 SONOS 快閃記憶體元件抹寫週期忍耐度 之研究
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張如薇; Chang, Ru-Wei; 白田理一郎; Shirota, Riichiro |
| 國立交通大學 |
2014-12-12T02:36:08Z |
非揮發性快閃記憶體元件電荷分佈與可靠度之探討
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李富海; Li, Fu-Hai; 白田理一郎; Shirota, Riichiro |
| 國立交通大學 |
2014-12-12T02:35:58Z |
非揮發性快閃記憶體新式寫入序列方法之研究
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毛妮娜; Mitiukhina Nina; 白田理一郎; Shirota Riichiro |
| 國立交通大學 |
2014-12-08T15:31:35Z |
Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme
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Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro |
| 國立交通大學 |
2014-12-08T15:31:14Z |
Impact of Source/Drain Junction and Cell Shape on Random Telegraph Noise in NAND Flash Memory
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Li, Fu-Hai; Shirota, Riichiro |
| 國立交通大學 |
2014-12-08T15:24:12Z |
A New Programming Scheme for the Improvement of Program Disturb Characteristics in Scaled NAND Flash Memory
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Shirota, Riichiro; Huang, Chen-Hao; Nagai, Shinji; Sakamoto, Yoshinori; Li, Fu-Hai; Mitiukhina, Nina; Arakawa, Hideki |
| 國立交通大學 |
2014-12-08T15:21:19Z |
A New Disturb Free Programming Scheme in Scaled NAND Flash Memory
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Shirota, Riichiro; Huang, Chen-Hao; Arakawa, Hideki |
| 國立交通大學 |
2014-12-08T15:20:40Z |
Analysis of the Correlation Between the Programmed Threshold-Voltage Distribution Spread of NAND Flash Memory Devices and Floating-Gate Impurity Concentration
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Shirota, Riichiro; Sakamoto, Yoshinori; Hsueh, Hung-Ming; Jaw, Jian-Ming; Chao, Wen-Chuan; Chao, Chih-Ming; Yang, Sheng-Fu; Arakawa, Hideki |
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