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Showing items 1-8 of 8 (1 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:42Z |
1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors
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Shiu, K.H.;Chiang, T.H.;Chang, P.;Tung, L.T.;Hong, M.;Kwo, J.;Tsai, W.; Shiu, K.H.; Chiang, T.H.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:42Z |
1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors
|
Shiu, K.H.;Chiang, T.H.;Chang, P.;Tung, L.T.;Hong, M.;Kwo, J.;Tsai, W.; Shiu, K.H.; Chiang, T.H.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:41Z |
Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures
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Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:40Z |
Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2 O3 as gate dielectric
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Lee, C.H.; Shiu, K.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG; Tung, L.T.; Chiu, H.C.; Chang, W.H.; Chang, Y.C. |
| 臺大學術典藏 |
2019-12-27T07:49:39Z |
Inversion n-channel GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as gate dielectrics
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Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG; Shiu, K.H.; Chiu, H.C.; Chang, W.H.; Chang, Y.C.; MINGHWEI HONG;Tsai, C.C.;Hong, J.M.;Kwo, J.;Hong, M.;Lee, C.H.;Shiu, K.H.;Chiu, H.C.;Chang, W.H.;Chang, Y.C. |
| 臺大學術典藏 |
2019-12-27T07:49:39Z |
Inversion n-channel GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as gate dielectrics
|
Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG; Shiu, K.H.; Chiu, H.C.; Chang, W.H.; Chang, Y.C.; MINGHWEI HONG;Tsai, C.C.;Hong, J.M.;Kwo, J.;Hong, M.;Lee, C.H.;Shiu, K.H.;Chiu, H.C.;Chang, W.H.;Chang, Y.C. |
| 臺大學術典藏 |
2019-12-27T07:49:39Z |
Approaching fermi level unpinning in oxide-ino.2gao.8as
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MINGHWEI HONG;Hong, M.;Tsai, W.;Wang, W.E.;Kwo, J.;Shiu, K.H.;Lin, D.;Lin, T.D.;Lee, W.C.;Chiang, T.H.; Chiang, T.H.; Lee, W.C.; Lin, T.D.; Lin, D.; Shiu, K.H.; Kwo, J.; Wang, W.E.; Tsai, W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:39Z |
Approaching fermi level unpinning in oxide-ino.2gao.8as
|
MINGHWEI HONG;Hong, M.;Tsai, W.;Wang, W.E.;Kwo, J.;Shiu, K.H.;Lin, D.;Lin, T.D.;Lee, W.C.;Chiang, T.H.; Chiang, T.H.; Lee, W.C.; Lin, T.D.; Lin, D.; Shiu, K.H.; Kwo, J.; Wang, W.E.; Tsai, W.; Hong, M.; MINGHWEI HONG |
Showing items 1-8 of 8 (1 Page(s) Totally)
1
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