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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
臺大學術典藏 2022-03-22T08:30:48Z Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:48Z Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:46Z Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:46Z Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:27:46Z Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:27:46Z Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN

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