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Institution Date Title Author
臺大學術典藏 2018-09-10T04:53:21Z Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells Lin, C.-F.;Su, Y.-S.;Wu, C.-H.;Shmavonyan, G.S.; Lin, C.-F.; Su, Y.-S.; Wu, C.-H.; Shmavonyan, G.S.; CHAO-HSIN WU; Lin, Ching-Fuh
國立臺灣大學 2004 Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells Lin, Ching-Fuh; Su, Yi-Shin; Wu, Chao-Hsin; Shmavonyan, G.S.
國立臺灣大學 2003-12 Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band Tsai, Chia-Wei; Shmavonyan, G.S.; Su, Yi-Shin; Lin, Ching-Fuh

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