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Showing items 1-8 of 8 (1 Page(s) Totally)
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| 國立交通大學 |
2020-10-05T02:02:01Z |
Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs
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Shrestha, Niraj Man; Li, Yiming; Chen, Chao-Hsuan; Sanyal, Indraneel; Tarng, Jenn-Hawn; Chyi, Jen-Inn; Samukawa, Seiji |
| 國立交通大學 |
2020-02-02T23:54:39Z |
Low resistive InGaN film grown by metalorganic chemical vapor deposition
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Shrestha, Niraj Man; Chauhan, Prerna; Wong, Yuen-Yee; Li, Yiming; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2019-05-02T00:25:47Z |
Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure
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Shrestha, Niraj Man; Li, Yiming; Suemitsu, Tetsuya; Samukawa, Seiji |
| 國立交通大學 |
2018-01-24T07:38:48Z |
應用於高功率電子之高電子遷移率氮化鎵電晶體其設計、模擬與開發 之研究
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尼洛齊; 張翼; Shrestha, Niraj Man; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:49Z |
Optimal design of the multiple-apertures-GaN-based vertical HEMTs with SiO2 current blocking layer
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Shrestha, Niraj Man; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2015-12-02T02:59:06Z |
A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer
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Shrestha, Niraj Man; Wang, Yuen Yee; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2015-07-21T08:31:14Z |
Device Simulation of P-InAlN-Gate AlGaN/GaN High Electron Mobility Transistor
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Shrestha, Niraj Man; Lin, Yueh-Chin; Chang, Han-Tung; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer
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Shrestha, Niraj Man; Li, Yiming; Chang, Edward Yi |
Showing items 1-8 of 8 (1 Page(s) Totally)
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