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Institution Date Title Author
國立交通大學 2019-04-02T05:59:14Z Photoluminescence studies of GaN films of different buffer layer and doping concentration Shen, CC; Shu, CK; Lin, HC; Ou, J; Chen, WK; Lee, MC; Chen, WH
國立交通大學 2014-12-08T15:49:23Z Phonon-plasmon interaction in GaN films studied by Raman scattering Shen, CC; Shu, CK; Lin, HC; Chen, WK; Chen, WH; Lee, MC
國立交通大學 2014-12-08T15:49:23Z Photoluminescence studies of GaN films of different buffer layer and doping concentration Shen, CC; Shu, CK; Lin, HC; Ou, J; Chen, WK; Lee, MC; Chen, WH
國立交通大學 2014-12-08T15:48:47Z Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition Shu, CK; Ou, J; Lin, HC; Chen, WK; Lee, MC
國立交通大學 2014-12-08T15:48:46Z Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy Chen, WK; Lin, HC; Pan, YC; Ou, J; Shu, CK; Chen, WH; Lee, MC
國立交通大學 2014-12-08T15:47:23Z Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy Lee, MC; Lin, HC; Pan, YC; Shu, CK; Ou, J; Chen, WH; Chen, WK
國立交通大學 2014-12-08T15:46:55Z Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy Pan, YC; Lee, WH; Shu, CK; Lin, HC; Chiang, CI; Chang, H; Lin, DS; Lee, MC; Chen, WK
國立交通大學 2014-12-08T15:46:18Z Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition Shu, CK; Ou, J; Lin, HC; Chen, WK; Lee, MC
國立交通大學 2014-12-08T15:46:16Z A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN Ou, J; Pan, YC; Lee, WH; Shu, CK; Lin, HC; Lee, MC; Chen, WH; Chiang, CI; Chang, H; Chen, WK
國立交通大學 2014-12-08T15:45:54Z Optical and electrical investigations of isoelectronic In-doped GaN films Shu, CK; Lee, WH; Pan, YC; Chen, CC; Lin, HC; Ou, J; Chen, WH; Chen, WK; Lee, MC
國立交通大學 2014-12-08T15:45:15Z Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy Huang, HY; Shu, CK; Lin, WC; Chuang, CH; Lee, MC; Chen, WK; Lee, YY
國立交通大學 2014-12-08T15:44:44Z Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition Huang, HY; Lin, WC; Lee, WH; Shu, CK; Liao, KC; Chen, WK; Lee, MC; Chen, WH; Lee, YY
國立交通大學 2014-12-08T15:43:57Z Luminescence intensity reduction in Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy Shu, CK; Chen, HH; Lee, WH; Pan, YC; Huang, HY; Ou, JN; Chen, WK; Chen, WH; Lee, MC
國立交通大學 2014-12-08T15:42:24Z Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence Huang, HY; Chuang, CH; Shu, CK; Pan, YC; Lee, WH; Chen, WK; Chen, WH; Lee, MC
國立交通大學 2014-12-08T15:27:16Z The effects of isoelectronic in-doping in GaN films grown by MOCVD Shu, CK; Ou, J; Lin, HC; Pan, YC; Lee, WH; Chen, WK; Lee, MC
國立交通大學 2014-12-08T15:27:05Z The electronic structure and optical properties of phosphorus implanted GaN films Shu, CK; Lee, WH; Huang, HY; Chuang, CH; Chen, WK; Chen, WH; Lee, MC
國立交通大學 2014-12-08T15:27:01Z Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures Lin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC
國立交通大學 2014-12-08T15:27:01Z Effects in carrier dynamics of Isolectronic In doped in GaN films grown by metalorganic vapor phase epitaxy Huang, HY; Shu, CK; Lin, WC; Liao, KC; Chuang, CH; Lee, MC; Chen, WH; Chen, WK; Lee, YY
國立交通大學 2014-12-08T15:26:59Z Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy Shu, CK; Lee, WH; Pan, YC; Huang, HY; Chen, HH; Chen, WH; Chen, WK; Lee, MC
國立交通大學 2014-12-08T15:26:59Z Gallium K-edge EXAFS study of GaN : Mg films Pan, YC; Wang, SF; Lee, WH; Lin, WC; Shu, CK; Chiang, CI; Lin, CH; Chang, H; Lee, JF; Jang, LY; Lin, DS; Lee, MC; Chen, WH; Chen, WK

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