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| 國立交通大學 |
2019-04-02T05:59:14Z |
Photoluminescence studies of GaN films of different buffer layer and doping concentration
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Shen, CC; Shu, CK; Lin, HC; Ou, J; Chen, WK; Lee, MC; Chen, WH |
| 國立交通大學 |
2014-12-08T15:49:23Z |
Phonon-plasmon interaction in GaN films studied by Raman scattering
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Shen, CC; Shu, CK; Lin, HC; Chen, WK; Chen, WH; Lee, MC |
| 國立交通大學 |
2014-12-08T15:49:23Z |
Photoluminescence studies of GaN films of different buffer layer and doping concentration
|
Shen, CC; Shu, CK; Lin, HC; Ou, J; Chen, WK; Lee, MC; Chen, WH |
| 國立交通大學 |
2014-12-08T15:48:47Z |
Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition
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Shu, CK; Ou, J; Lin, HC; Chen, WK; Lee, MC |
| 國立交通大學 |
2014-12-08T15:48:46Z |
Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy
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Chen, WK; Lin, HC; Pan, YC; Ou, J; Shu, CK; Chen, WH; Lee, MC |
| 國立交通大學 |
2014-12-08T15:47:23Z |
Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy
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Lee, MC; Lin, HC; Pan, YC; Shu, CK; Ou, J; Chen, WH; Chen, WK |
| 國立交通大學 |
2014-12-08T15:46:55Z |
Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy
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Pan, YC; Lee, WH; Shu, CK; Lin, HC; Chiang, CI; Chang, H; Lin, DS; Lee, MC; Chen, WK |
| 國立交通大學 |
2014-12-08T15:46:18Z |
Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition
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Shu, CK; Ou, J; Lin, HC; Chen, WK; Lee, MC |
| 國立交通大學 |
2014-12-08T15:46:16Z |
A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN
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Ou, J; Pan, YC; Lee, WH; Shu, CK; Lin, HC; Lee, MC; Chen, WH; Chiang, CI; Chang, H; Chen, WK |
| 國立交通大學 |
2014-12-08T15:45:54Z |
Optical and electrical investigations of isoelectronic In-doped GaN films
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Shu, CK; Lee, WH; Pan, YC; Chen, CC; Lin, HC; Ou, J; Chen, WH; Chen, WK; Lee, MC |
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