| 國立臺灣科技大學 |
2011 |
Formation of polycrystalline thin-film transistors with stacked poly-SiGe/poly-Si channel layer for low-voltage applications
|
Juang, M.H.;Chang, C.W.;Peng, Y.S.;Hwang, C.C.;Wang, J.L.;Shye, D.C. |
| 國立臺灣科技大學 |
2011 |
Effects of channel layer thickness on the electrical characteristics of top-gate staggered microcrystalline-Si thin-film transistors
|
Juang, M.H.;Peng, Y.S.;Shye, D.C.;Hwang, C.C.;Wang, J.L. |
| 國立臺灣科技大學 |
2011 |
Submicron-meter tunneling field-effect poly-Si thin-film transistors with a thinned channel layer
|
Juang, M.H.;Peng, Y.S.;Shye, D.C.;Wang, J.L.;Hwang, C.C.;Jang, S.L. |
| 國立臺灣科技大學 |
2011 |
Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation
|
Juang, M.H.;Yu, J.;Hwang, C.C.;Shye, D.C.;Wang, J.L. |
| 國立臺灣科技大學 |
2010 |
A process simplification scheme for fabricating CMOS polycrystalline-Si thin film transistors
|
Juang M.-H.; Chang C.-W.; Shye D.-C.; Hwang C.-C.; Wang J.-L.; Jang S.-L. |
| 國立臺灣科技大學 |
2010 |
Formation of n-channel polycrystalline-Si thin-film transistors by using retrograde channel scheme with double implantation
|
Juang M.-H.; Huang C.W.; Wu M.-L.; Hwang C.C.; Wang J.L.; Shye D.C.; Jang S.-L. |
| 國立臺灣科技大學 |
2010 |
Formation of n-channel polycrystalline-Si thin-film transistors by dual source/drain implantation
|
Juang M.-H.; Chang C.W.; Wang J.L.; Shye D.C.; Hwang C.C.; Jang S.-L. |
| 國立臺灣科技大學 |
2010 |
Formation of sub-micrometer polycrystalline-SiGe thin-film transistors by using a thinned channel layer
|
Juang M.-H.; Chang C.W.; Huang C.W.; Wang J.L.; Shye D.C.; Hwang C.C.; Jang S.L. |
| 國立臺灣科技大學 |
2010 |
Microcrystalline-Si thin-film transistors formed by using palladium silicided source/drain contact electrode
|
Juang M.-H.; Peng Y.S.; Wang J.L.; Shye D.C.; Hwang C.C.; Jang S.-L. |
| 國立臺灣科技大學 |
2010 |
Submicron-meter polycrystalline-SiGe thin-film transistors with tunneling field-effect-transistor structure
|
Juang M.H.; Peng Y.S.; Wang J.L.; Shye D.C.; Hwang C.C.; Jang S.L. |
| 國立臺灣科技大學 |
2010 |
Formation of 30-V power DMOSFET's by implementing p-counter-doped region within n-type drift layer
|
Juang M.-H.; Hwang C.C.; Shye D.C.; Wang J.L.; Jang S.L. |
| 國立臺灣科技大學 |
2010 |
Study of polycrystalline-Si thin-film transistors with different channel layer thickness at low bias voltage
|
Juang, M.H.;Chang, C.W.;Wang, J.L.;Shye, D.C.;Hwang, C.C.;Jang, S.L. |
| 國立臺灣科技大學 |
2009 |
Effects of laser treatment for the Pb(Zr, Ti)O3/(La, Sr)MnO 3 heterostructure prepared onto the stainless steel substrate
|
Shye D.-C.; Chou C.-C.; Liou B.-H.; Hung K.-Y.; Juan P.-C. |
| 國立臺灣科技大學 |
2009 |
The formation of polycrystalline-Si thin-film transistors by using large-angle-tilt-implantation of dopant through gate sidewall spacer
|
Juang M.-H.; Huang C.W.; Chang C.W.; Shye D.C.; Hwang C.C.; Wang J.L.; Jang S.L. |
| 國立臺灣科技大學 |
2009 |
Effects of Laser Treatment for the Pb(Zr, Ti)O-3/(La, Sr)MnO3 Heterostructure Prepared onto the Stainless Steel Substrate
|
Shye, D.C.;Chou, C.C.;Liou, B.H.;Hung, K.Y.;Juan, P.C. |
| 國立臺灣科技大學 |
2007 |
Dependence of ferroelectric characteristics on the deposition temperature of (Pb,Sr)TiO3 films
|
Wang, J.-L.;Lai, Y.-S.;Shye, D.-C.;Chou, C.-C.;Chiou, B.-S.;Juan, C.-P.;Cheng, H.-C. |
