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Institution Date Title Author
國立臺灣科技大學 2011 Formation of polycrystalline thin-film transistors with stacked poly-SiGe/poly-Si channel layer for low-voltage applications Juang, M.H.;Chang, C.W.;Peng, Y.S.;Hwang, C.C.;Wang, J.L.;Shye, D.C.
國立臺灣科技大學 2011 Effects of channel layer thickness on the electrical characteristics of top-gate staggered microcrystalline-Si thin-film transistors Juang, M.H.;Peng, Y.S.;Shye, D.C.;Hwang, C.C.;Wang, J.L.
國立臺灣科技大學 2011 Submicron-meter tunneling field-effect poly-Si thin-film transistors with a thinned channel layer Juang, M.H.;Peng, Y.S.;Shye, D.C.;Wang, J.L.;Hwang, C.C.;Jang, S.L.
國立臺灣科技大學 2011 Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation Juang, M.H.;Yu, J.;Hwang, C.C.;Shye, D.C.;Wang, J.L.
國立臺灣科技大學 2010 A process simplification scheme for fabricating CMOS polycrystalline-Si thin film transistors Juang M.-H.; Chang C.-W.; Shye D.-C.; Hwang C.-C.; Wang J.-L.; Jang S.-L.
國立臺灣科技大學 2010 Formation of n-channel polycrystalline-Si thin-film transistors by using retrograde channel scheme with double implantation Juang M.-H.; Huang C.W.; Wu M.-L.; Hwang C.C.; Wang J.L.; Shye D.C.; Jang S.-L.
國立臺灣科技大學 2010 Formation of n-channel polycrystalline-Si thin-film transistors by dual source/drain implantation Juang M.-H.; Chang C.W.; Wang J.L.; Shye D.C.; Hwang C.C.; Jang S.-L.
國立臺灣科技大學 2010 Formation of sub-micrometer polycrystalline-SiGe thin-film transistors by using a thinned channel layer Juang M.-H.; Chang C.W.; Huang C.W.; Wang J.L.; Shye D.C.; Hwang C.C.; Jang S.L.
國立臺灣科技大學 2010 Microcrystalline-Si thin-film transistors formed by using palladium silicided source/drain contact electrode Juang M.-H.; Peng Y.S.; Wang J.L.; Shye D.C.; Hwang C.C.; Jang S.-L.
國立臺灣科技大學 2010 Submicron-meter polycrystalline-SiGe thin-film transistors with tunneling field-effect-transistor structure Juang M.H.; Peng Y.S.; Wang J.L.; Shye D.C.; Hwang C.C.; Jang S.L.

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