| 國立成功大學 |
2023 |
Highly Active NiO-Ni(OH)2-Cr2O3/Ni Hydrogen Evolution Electrocatalyst through Synergistic Reaction Kinetics
|
Chuang, Chuang C.-H.;Kang, P.-H.;Lai, Y.-Y.;Hou, C.-H.;Tseng, W.-C.;Huang, Y.-J.;Fang, M.-H.;Shyue, J.-J.;Kaun, C.-C.;Cheng, Y.-J. |
| 國立成功大學 |
2023 |
Revealing the Role of Thiocyanate for Improving the Performance of Perovskite Solar Cells
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Lin, P.-Y.;Lin, C.-F.;Chiu, Y.-Y.;Chen, H.-H.;Li, M.-H.;Raja, Raja R.;Wu, C.-S.;Hou, C.-H.;Sung-Yun, Hsiao S.;Shyue, J.-J.;Lee, D.-C.;Ho, S.-Z.;Chen, Y.-C.;Chen, P. |
| 臺大學術典藏 |
2022-08-09T03:50:20Z |
Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method
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Chang M.-C.; Ho P.-H.; Tseng M.-F.; Lin F.-Y.; Hou C.-H.; Lin I.-K.; Wang H.; Huang P.-P.; Chiang C.-H.; Yang Y.-C.; Wang I.-T.; Du H.-Y.; Wen C.-Y.; Shyue J.-J.; Chen C.-W.; Chen K.-H.; Chiu P.-W.; Chen L.-C.; Chang M.-C.; Ho P.-H.; Lin I.-K.; Chiang C.-H.; Wang I.-T.; Du H.-Y.; Wen C.-Y.; Chen C.-W.; Chen L.-C.; LI-CHYONG CHEN |
| 臺大學術典藏 |
2022-04-25T06:39:04Z |
Supramolecular gating of TADF process in self-assembled nano-spheres for high-resolution OLED applications
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Hsieh Y.-Y;S?nchez R.S;Raffy G;Shyue J.-J;Hirsch L;Del Guerzo A;Wong K.-T;Bassani D.M.; Hsieh Y.-Y; S?nchez R.S; Raffy G; Shyue J.-J; Hirsch L; Del Guerzo A; Wong K.-T; Bassani D.M.; KEN-TSUNG WONG |
| 臺大學術典藏 |
2022-03-22T08:34:54Z |
Robust Unencapsulated Perovskite Solar Cells Protected by a Fluorinated Fullerene Electron Transporting Layer
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Huang H.-H;Tsai H;Raja R;Lin S.-L;Ghosh D;Hou C.-H;Shyue J.-J;Tretiak S;Chen W;Lin K.-F;Nie W;Wang L.; Wang L.; LEE-YIH WANG et al. |
| 臺大學術典藏 |
2022-03-22T08:34:53Z |
Robust Unencapsulated Perovskite Solar Cells Protected by a Fluorinated Fullerene Electron Transporting Layer
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Huang H.-H;Tsai H;Raja R;Lin S.-L;Ghosh D;Hou C.-H;Shyue J.-J;Tretiak S;Chen W;Lin K.-F;Nie W;Wang L.; Wang L.; LEE-YIH WANG et al. |
| 臺大學術典藏 |
2022-03-22T08:31:51Z |
Robust Unencapsulated Perovskite Solar Cells Protected by a Fluorinated Fullerene Electron Transporting Layer
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Huang H.-H;Tsai H;Raja R;Lin S.-L;Ghosh D;Hou C.-H;Shyue J.-J;Tretiak S;Chen W;Lin K.-F;Nie W;Wang L.; Wang L.; LEE-YIH WANG et al. |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
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Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:47Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
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Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
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Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:45Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
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Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:38Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:30:36Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
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Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
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Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:37Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-09T03:12:27Z |
Rapid label-free determination of ketamine in whole blood using secondary ion mass spectrometry
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Liao H.-Y.; Chen J.-H.; Shyue J.-J.; Shun C.-T.; HUEI-WEN CHEN; Liao S.-W.; Hong C.-K.; Chen P.-S. |
| 臺大學術典藏 |
2022-03-09T02:19:00Z |
Rapid label-free determination of ketamine in whole blood using secondary ion mass spectrometry
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Liao H.-Y.; Chen J.-H.; Shyue J.-J.; Shun C.-T.; Chen H.-W.; Liao S.-W.; Hong C.-K.; PAI-SHAN CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:02Z |
Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
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Wang C.-I;Chang T.-J;Yin Y.-T;Jiang Y.-S;Shyue J.-J;Chen M.-J.; Wang C.-I; Chang T.-J; Yin Y.-T; Jiang Y.-S; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-03T01:43:19Z |
Heterocyclic-Additive-Activated Dinuclear Dysprosium Electrocatalysts for Heterogeneous Water Oxidation
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Tung C.-W;Tso C.-H;Chen B.-Y;Chu H;Hou C.-H;Chen H.-C;Chang M.-C;Shyue J.-J;Lin P.-H;Chen H.M.; Tung C.-W; Tso C.-H; Chen B.-Y; Chu H; Hou C.-H; Chen H.-C; Chang M.-C; Shyue J.-J; Lin P.-H; Chen H.M.; MU-CHIEH CHANG |
| 臺大學術典藏 |
2021-08-03T01:42:56Z |
Heterocyclic-Additive-Activated Dinuclear Dysprosium Electrocatalysts for Heterogeneous Water Oxidation
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Tung C.-W;Tso C.-H;Chen B.-Y;Chu H;Hou C.-H;Chen H.-C;Chang M.-C;Shyue J.-J;Lin P.-H;Chen H.M.; Tung C.-W; Tso C.-H; Chen B.-Y; Chu H; Hou C.-H; Chen H.-C; Chang M.-C; Shyue J.-J; Lin P.-H; Chen H.M.; HAO MING CHEN |
| 臺大學術典藏 |
2021-08-03T01:42:55Z |
In situ unraveling of the effect of the dynamic chemical state on selective CO2reduction upon zinc electrocatalysts
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Chen T.-L;Chen H.-C;Huang Y.-P;Lin S.-C;Hou C.-H;Tan H.-Y;Tung C.-W;Chan T.-S;Shyue J.-J;Chen H.M.; Chen T.-L; Chen H.-C; Huang Y.-P; Lin S.-C; Hou C.-H; Tan H.-Y; Tung C.-W; Chan T.-S; Shyue J.-J; Chen H.M.; HAO MING CHEN |
