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Showing items 36-45 of 177  (18 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2020-06-11T06:23:05Z Effect of porosity on infrared-absorption spectra of silicon dioxide Chou, J.-S.;Lee, S.-C.; Chou, J.-S.; Lee, S.-C.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:23:05Z Water-induced room-temperature oxidation of Si-H and -Si-Si- bonds in silicon oxide Liao, W.-S.;Lee, S.-C.; Liao, W.-S.; Lee, S.-C.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:23:04Z Observation of X-band electron quantum interference and transport through virtual states in Al x Ga 1-x As/AlAs heterostructures Shieh, T.-H.;Wu, C.-C.;Lee, S.-C.; Shieh, T.-H.; Wu, C.-C.; Lee, S.-C.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:23:04Z Material and electrical properties of highly mismatched In xGa1-xAs on GaAs by molecular-beam epitaxy Chang, S.-Z.;Chang, T.-C.;Shen, J.-L.;Lee, S.-C.;Chen, Y.-F.; Chang, S.-Z.; Chang, T.-C.; Shen, J.-L.; Lee, S.-C.; Chen, Y.-F.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:23:04Z Morphologies and photoluminescence of porous silicon under different etching and oxidation conditions Lin, C.-H.;Lee, S.-C.;Chen, Y.-F.; Lin, C.-H.; Lee, S.-C.; Chen, Y.-F.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:23:04Z Dislocation generation mechanisms of In x Ga 1-x As (0?x?1) epilayers grown on (100) InP substrates by molecular beam epitaxy Lee, S.-C.; Chen, C.R.; Chen, L.J.; SI-CHEN LEE; Chang, S.-Z.;Lee, S.-C.;Chen, C.R.;Chen, L.J.; Chang, S.-Z.
臺大學術典藏 2020-06-11T06:23:04Z Electrical and optical properties of implanted amorphous silicon Wei, J.-H.;Lee, S.-C.; Wei, J.-H.; Lee, S.-C.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:23:03Z High-performance metal/SiO 2 /InSb capacitor fabricated by photoenhanced chemical vapor deposition Sun, T.-P.;Lee, S.-C.;Liu, K.-C.;Pang, Y.-M.;Yang, S.-J.; Sun, T.-P.; Lee, S.-C.; Liu, K.-C.; Pang, Y.-M.; Yang, S.-J.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:23:03Z The growth of highly mismatched In x Ga 1-x As (0.28?x?1) on GaAs by molecular-beam epitaxy Chang, S.-Z.;Chang, T.-C.;Lee, S.-C.; Chang, S.-Z.; Chang, T.-C.; Lee, S.-C.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:23:03Z Studies of low-surface 2-kT recombination current of the emitter-base heterojunction of heterojunction bipolar transistors Wu, C.-C.;Ting, J.-L.;Lee, S.-C.;Lin, H.-H.; Wu, C.-C.; Ting, J.-L.; Lee, S.-C.; Lin, H.-H.; SI-CHEN LEE

Showing items 36-45 of 177  (18 Page(s) Totally)
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