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| 國立交通大學 |
2019-08-02T02:18:32Z |
Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory
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Wu, Facai; Si, Shuyao; Cao, Peng; Wei, Wei; Zhao, Xiaolong; Shi, Tuo; Zhang, Xumeng; Ma, Jianwei; Cao, Rongrong; Liao, Lei; Tseng, Tseung-Yuen; Liu, Qi |
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