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Showing items 1-19 of 19 (1 Page(s) Totally)
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| 國立交通大學 |
2020-10-05T02:02:03Z |
Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices
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Chang, Lung-Yu; Simanjuntak, Firman Mangasa; Hsu, Chun-Ling; Chandrasekaran, Sridhar; Tseng, Tseung-Yuen |
| 國立交通大學 |
2020-07-01T05:21:22Z |
Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications
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Simanjuntak, Firman Mangasa; Ohno, Takeo; Chandrasekaran, Sridhar; Tseng, Tseung-Yuen; Samukawa, Seiji |
| 國立交通大學 |
2020-07-01T05:21:21Z |
Sensing performance of gas sensors fabricated from controllably grown ZnO-based nanorods on seed layers
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Singh, Pragya; Simanjuntak, Firman Mangasa; Wu, Yi-Chu; Kumar, Amit; Zan, Hsiao-Wen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2020-05-05T00:02:25Z |
Effects of pillar size modulation on the magneto-structural coupling in self-assembled BiFeO3-CoFe2O4 heteroepitaxy
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Chu, Ying-Hao; Juang, Jenh-Yih; My Ngoc Duong; Chen, Yu-Xun; Amrillah, Tahta; Abdussalam, Wildan; Simanjuntak, Firman Mangasa; Chen, Chia-Hao |
| 國立交通大學 |
2019-12-13T01:12:22Z |
Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme
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Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-12-13T01:12:16Z |
Role of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitor
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Pattanayak, Bhaskar; Simanjuntak, Firman Mangasa; Panda, Debashis; Yang, Chih-Chieh; Kumar, Amit; Phuoc-Anh Le; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-10-05T00:08:41Z |
Improving linearity by introducing Al in HfO2 as a memristor synapse device
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Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Saminathan, R.; Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-08-02T02:18:37Z |
ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
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Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-03T06:40:07Z |
Status and Prospects of ZnO-Based Resistive Switching Memory Devices
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Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:47Z |
Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
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Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:50Z |
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices
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Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Aluguri, Rakesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:50Z |
Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
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Singh, Pragya; Simanjuntak, Firman Mangasa; Kumar, Amit; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:54:28Z |
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
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Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
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Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:52:54Z |
Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
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Simanjuntak, Firman Mangasa; Singh, Pragya; Chandrasekaran, Sridhar; Lumbantoruan, Franky Juanda; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:52:48Z |
Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
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Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:13Z |
Impacts of Co doping on ZnO transparent switching memory device characteristics
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Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:22Z |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:18Z |
Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
Showing items 1-19 of 19 (1 Page(s) Totally)
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