|
"simanjuntak firman mangasa"的相关文件
显示项目 11-19 / 19 (共1页)
1
每页显示[10|25|50]项目
| 國立交通大學 |
2019-04-02T05:58:50Z |
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices
|
Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Aluguri, Rakesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:50Z |
Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
|
Singh, Pragya; Simanjuntak, Firman Mangasa; Kumar, Amit; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:54:28Z |
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
|
Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
|
Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:52:54Z |
Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
|
Simanjuntak, Firman Mangasa; Singh, Pragya; Chandrasekaran, Sridhar; Lumbantoruan, Franky Juanda; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:52:48Z |
Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
|
Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:13Z |
Impacts of Co doping on ZnO transparent switching memory device characteristics
|
Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:22Z |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
|
Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:18Z |
Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming
|
Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
显示项目 11-19 / 19 (共1页)
1
每页显示[10|25|50]项目
|
