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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T08:08:58Z |
A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method
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Lu, I. Lin;Wu, Yuh-Renn;Singh, Jasprit; Lu, I. Lin; Wu, Yuh-Renn; Singh, Jasprit; YUH-RENN WU |
| 國立臺灣大學 |
2008 |
Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption
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Wu, Yuh-Renn; Hinckley, John M.; Singh, Jasprit |
| 國立臺灣大學 |
2008 |
Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting
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Wu, Yuh-Renn; Lin, Yih-Yin; Huang, Hung-Hsun; Singh, Jasprit |
| 國立臺灣大學 |
2007-10 |
Polarization Effects in Semiconductors - From Ab InitioTheory to Device Applications - Chapter II : Lateral and Vertical Charge Transport in Polar Nitride Heterostructures: Applications for HEMTs, Novel Vertical Junction and Sensors
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Wu, Yuh-Renn; Singh, Madhusudan; Singh, Jasprit |
| 臺大學術典藏 |
2007-10 |
Polarization Effects in Semiconductors - From Ab InitioTheory to Device Applications - Chapter II : Lateral and Vertical Charge Transport in Polar Nitride Heterostructures: Applications for HEMTs, Novel Vertical Junction and Sensors
|
Wu, Yuh-Renn; Singh, Madhusudan; Singh, Jasprit; Wu, Yuh-Renn; Singh, Madhusudan; Singh, Jasprit |
| 國立臺灣大學 |
2007 |
Transient Study of Self-heating Effects in AlGaN/GaN HFETs: Consequence of Carrier Velocities, Temperature, and Device Performance
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Wu, Yuh-Renn; Singh, Jasprit |
Showing items 1-6 of 6 (1 Page(s) Totally)
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