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Showing items 11-16 of 16 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:04:29Z |
Growth and Crystal Structure Investigation of Self-catalyst InAs/GaSb Heterostructure Nanowires on Si substrate
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Kakkerla, Ramesh Kumar; Hsiao, Chih-Jen; Anandan, Deepak; Singh, Sankalp Kumar; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:59:07Z |
Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition
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Kakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Lee, Ching-Ting; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:47Z |
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
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Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:41Z |
Growth and Crystal Structure Investigation of InAs/GaSb Heterostructure Nanowires on Si Substrate
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Kakkerla, Ramesh Kumar; Hsiao, Chih-Jen; Anandan, Deepak; Singh, Sankalp Kumar; Chang, Sheng-Po; Pande, Krishna P.; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:51Z |
Hetero structure PNPN tunnel FET: Analysis of scaling effects on counter doping
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Joseph, H. Bijo; Singh, Sankalp Kumar; Hariharan, R. M.; Priya, P. Aruna; Kumar, N. Mohan; Thiruvadigal, D. John |
| 國立交通大學 |
2018-08-21T05:53:31Z |
Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD
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Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi |
Showing items 11-16 of 16 (1 Page(s) Totally)
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