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| 臺大學術典藏 |
2020-01-13T08:25:14Z |
GeSn-based p-i-n photodiodes with strained active layer on a Si wafer
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Tseng, H. H.; Li, H.; Mashanov, V.; Yang, Y. J.; Cheng, H. H.; Chang, G. E.; Soref, R. A.; Sun, G.; YAO-JOE YANG |
| 國立高雄應用科技大學 |
2010 |
Carrier dynamics of terahertz emission based on strained SiGe/Si single quantum well
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Hung, K. M.;Kuo, J.-Y.;Hong, C. C.;Sun, Greg;Soref, R. A. |
| 國立臺灣大學 |
2008-08 |
Electron tunneling in a strained n-type Si1-xGex/Si/Si1-xGex double-barrier structure
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Hung, K. M.; Cheng, T. H.; Huang, W. P.; Wang, K. Y.; Cheng, H. H.; Sun, G.; Soref, R. A. |
| 國立臺灣大學 |
2007-08 |
Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures
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Wang, K. Y.; Huang, W. P.; Cheng, H. H.; Sun, G.; Soref, R. A.; Nicholas, R. J.; Suen, Y. W. |
Showing items 1-4 of 4 (1 Page(s) Totally)
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