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Showing items 1-16 of 16 (1 Page(s) Totally)
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| 臺大學術典藏 |
2022-06-21T23:24:21Z |
Improved Vertical Carrier Transport for Green III-Nitride LEDs Using (In,Ga) N Alloy Quantum Barriers
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Lynsky, Cheyenne; Lheureux, Guillaume; Bonef, Bastien; Qwah, Kai Shek; White, Ryan C.; Denbaars, Steven P.; Nakamura, Shuji; YUH-RENN WU; Weisbuch, Claude; Speck, James S. |
| 臺大學術典藏 |
2022-02-21T23:30:55Z |
Efficiency and Forward Voltage of Blue and Green Lateral LEDs with v -shaped Defects and Random Alloy Fluctuation in Quantum Wells
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Ho, Cheng Han; Speck, James S.; Weisbuch, Claude; YUH-RENN WU |
| 臺大學術典藏 |
2022-02-21T23:30:55Z |
Disorder effects in nitride semiconductors: Impact on fundamental and device properties
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Weisbuch, Claude; Nakamura, Shuji; YUH-RENN WU; Speck, James S. |
| 臺大學術典藏 |
2021-09-21T23:19:43Z |
Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length including Random Alloy Fluctuations in (In, Ga) N and (Al, Ga) N Single Quantum Wells
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Shen, Huan Ting; Weisbuch, Claude; Speck, James S.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T15:19:17Z |
Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy
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Browne, David A.;Mazumder, Baishakhi;Wu, Yuh-Renn;Speck, James S.; Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T15:19:17Z |
Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy
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Browne, David A.;Mazumder, Baishakhi;Wu, Yuh-Renn;Speck, James S.; Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T14:53:40Z |
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
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Yang, Tsung-Jui;Shivaraman, Ravi;Speck, James S.;Wu, Yuh-Renn; Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S.; Wu, Yuh-Renn; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T14:53:40Z |
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
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Yang, Tsung-Jui;Shivaraman, Ravi;Speck, James S.;Wu, Yuh-Renn; Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S.; Wu, Yuh-Renn; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T14:53:40Z |
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
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Kyle, Erin C. H.;Kaun, Stephen W.;Burke, Peter G.;Wu, Feng;Wu, Yuh-Renn;Speck, James S.; Kyle, Erin C. H.; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T14:53:40Z |
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
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Kyle, Erin C. H.;Kaun, Stephen W.;Burke, Peter G.;Wu, Feng;Wu, Yuh-Renn;Speck, James S.; Kyle, Erin C. H.; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T14:53:40Z |
Atomic-scale nanofacet structure in semipolar (20(2)over-bar1) and (20(2)over-bar1) InGaN single quantum wells
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Zhao, Yuji;Wu, Feng;Yang, Tsung-Jui;Wu, Yuh-Renn;Nakamura, Shuji;Speck, James S.; Zhao, Yuji; Wu, Feng; Yang, Tsung-Jui; Wu, Yuh-Renn; Nakamura, Shuji; Speck, James S.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T14:53:40Z |
Atomic-scale nanofacet structure in semipolar (20(2)over-bar1) and (20(2)over-bar1) InGaN single quantum wells
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Zhao, Yuji;Wu, Feng;Yang, Tsung-Jui;Wu, Yuh-Renn;Nakamura, Shuji;Speck, James S.; Zhao, Yuji; Wu, Feng; Yang, Tsung-Jui; Wu, Yuh-Renn; Nakamura, Shuji; Speck, James S.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T14:53:39Z |
Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices
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Zhao, Yuji;Farrell, Robert M.;Wu, Yuh-Renn;Speck, James S.; Zhao, Yuji; Farrell, Robert M.; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T14:53:39Z |
Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices
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Zhao, Yuji;Farrell, Robert M.;Wu, Yuh-Renn;Speck, James S.; Zhao, Yuji; Farrell, Robert M.; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T09:17:37Z |
Performance and polarization effects in (11(2)over-bar2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
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Hardy, Matthew T.; Hsu, Po Shan; Dang, Po-Yuan; Wu, Feng; Romanov, Alexey; Wu, Yuh-Renn; Young, Erin C.; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Koslow, Ingrid L.; YUH-RENN WUet al. |
| 臺大學術典藏 |
2018-09-10T09:17:37Z |
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
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Wu, Yuh-Renn; Shivaraman, Ravi; Wang, Kuang-Chung; Speck, James S.; YUH-RENN WU |
Showing items 1-16 of 16 (1 Page(s) Totally)
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