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机构 日期 题名 作者
臺大學術典藏 2022-06-21T23:24:21Z Improved Vertical Carrier Transport for Green III-Nitride LEDs Using (In,Ga) N Alloy Quantum Barriers Lynsky, Cheyenne; Lheureux, Guillaume; Bonef, Bastien; Qwah, Kai Shek; White, Ryan C.; Denbaars, Steven P.; Nakamura, Shuji; YUH-RENN WU; Weisbuch, Claude; Speck, James S.
臺大學術典藏 2022-02-21T23:30:55Z Efficiency and Forward Voltage of Blue and Green Lateral LEDs with v -shaped Defects and Random Alloy Fluctuation in Quantum Wells Ho, Cheng Han; Speck, James S.; Weisbuch, Claude; YUH-RENN WU
臺大學術典藏 2022-02-21T23:30:55Z Disorder effects in nitride semiconductors: Impact on fundamental and device properties Weisbuch, Claude; Nakamura, Shuji; YUH-RENN WU; Speck, James S.
臺大學術典藏 2021-09-21T23:19:43Z Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length including Random Alloy Fluctuations in (In, Ga) N and (Al, Ga) N Single Quantum Wells Shen, Huan Ting; Weisbuch, Claude; Speck, James S.; YUH-RENN WU
臺大學術典藏 2018-09-10T15:19:17Z Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy Browne, David A.;Mazumder, Baishakhi;Wu, Yuh-Renn;Speck, James S.; Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU
臺大學術典藏 2018-09-10T15:19:17Z Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy Browne, David A.;Mazumder, Baishakhi;Wu, Yuh-Renn;Speck, James S.; Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU
臺大學術典藏 2018-09-10T14:53:40Z The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior Yang, Tsung-Jui;Shivaraman, Ravi;Speck, James S.;Wu, Yuh-Renn; Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S.; Wu, Yuh-Renn; YUH-RENN WU
臺大學術典藏 2018-09-10T14:53:40Z The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior Yang, Tsung-Jui;Shivaraman, Ravi;Speck, James S.;Wu, Yuh-Renn; Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S.; Wu, Yuh-Renn; YUH-RENN WU
臺大學術典藏 2018-09-10T14:53:40Z High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy Kyle, Erin C. H.;Kaun, Stephen W.;Burke, Peter G.;Wu, Feng;Wu, Yuh-Renn;Speck, James S.; Kyle, Erin C. H.; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU
臺大學術典藏 2018-09-10T14:53:40Z High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy Kyle, Erin C. H.;Kaun, Stephen W.;Burke, Peter G.;Wu, Feng;Wu, Yuh-Renn;Speck, James S.; Kyle, Erin C. H.; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU

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