|
English
|
正體中文
|
简体中文
|
总笔数 :2853327
|
|
造访人次 :
45123959
在线人数 :
761
教育部委托研究计画 计画执行:国立台湾大学图书馆
|
|
|
"sturm j c"的相关文件
显示项目 6-15 / 47 (共5页)
1 2 3 4 5 > >>
每页显示[10|25|50]项目
| 臺大學術典藏 |
2018-09-10T09:48:17Z |
Implant isolation of silicon two-dimensional electron gases at 4.2 K
|
Huang, C.-T.;Li, J.-Y.;Sturm, J.C.; Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:48:16Z |
The effect of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases
|
Li, J.-Y.;Sturm, J.C.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:48:16Z |
Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin sige cap layers
|
JIUN-YUN LI; Sturm, J.C.; Li, J.-Y.; Huang, C.-T.; Huang, C.-T.;Li, J.-Y.;Sturm, J.C. |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition
|
Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation
|
Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD
|
Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating
|
Li, J.Y.; Huang, C.T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T07:37:20Z |
Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition
|
Liu, C.W.; Tseng, Y.D.; Chern, M.Y.; Chang, C.L.; Sturm, J.C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T07:37:20Z |
Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD
|
Li, J.-Y.;Sturm, J.C.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T07:29:05Z |
Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition
|
Liu, C.W.; Tseng, Y.D.; Chern, M.Y.; Chang, C.L.; Sturm, J.C.; MING-YAU CHERN |
显示项目 6-15 / 47 (共5页)
1 2 3 4 5 > >>
每页显示[10|25|50]项目
|
