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"sturm j c"的相關文件
顯示項目 11-20 / 47 (共5頁)
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| 臺大學術典藏 |
2018-09-10T09:22:35Z |
Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD
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Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating
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Li, J.Y.; Huang, C.T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T07:37:20Z |
Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition
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Liu, C.W.; Tseng, Y.D.; Chern, M.Y.; Chang, C.L.; Sturm, J.C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T07:37:20Z |
Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD
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Li, J.-Y.;Sturm, J.C.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T07:29:05Z |
Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition
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Liu, C.W.; Tseng, Y.D.; Chern, M.Y.; Chang, C.L.; Sturm, J.C.; MING-YAU CHERN |
| 臺大學術典藏 |
2018-09-10T07:03:20Z |
Fracture mechanisms of sink thin-films on compliant substrates
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Kattamis, A.Z.; Cherenack, K.H.; Cheng, I.C.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T06:32:07Z |
Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices
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Wu, C.C.; Wu, C.I.; Sturm, J.C.; Kahn, A.; CHIH-I WU |
| 臺大學術典藏 |
2018-09-10T06:31:22Z |
Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics
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Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T06:31:22Z |
Growth of β-SiC on Si and poly-Si on β-SiC by rapid thermal chemical vapor deposition
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Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T06:30:23Z |
Amorphous silicon thin-film transistor backplanes deposited at 200 °C on clear plastic for lamination to electrophoretic displays
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Cheng, I.-C.; Long, K.; Hekmatshoar, B.; Cherenack, K.H.; Wagner, S.; Sturm, J.C.; Venugopal, S.M.; Loy, D.E.; O'Rourke, S.M.; Allee, D.R.; I-CHUN CHENG |
顯示項目 11-20 / 47 (共5頁)
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