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"sturm j c"的相關文件
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| 臺大學術典藏 |
2020-06-16T06:33:13Z |
Erratum: Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100)" (Appl. Phys. Lett. (1995) 67 (3915))
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Amour, A.St.;Liu, C.W.;Sturm, J.C.;Lacroix, Y.;Thewalt, M.L.W.; Amour, A.St.; Liu, C.W.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2020-06-11T06:15:55Z |
Electronic Materials
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Sturm, J.C.;Rim, K.;Harris, J.S.;Wu, C.-C.; Sturm, J.C.; Rim, K.; Harris, J.S.; Wu, C.-C.; CHUNG-CHIH WU |
| 臺大學術典藏 |
2020-04-28T07:14:44Z |
Reliability of active-matrix organic light-emitting-diode arrays with amorphous silicon thin-film transistor backplanes on clear plastic
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JIAN-ZHANG CHEN; Hack, M.; Rajan, K.; Sturm, J.C.; Hekmatshoar, B.; Kattamis, A.Z.; Cherenack, K.H.; Long, K.; Chen, J.-Z.; Wagner, S. |
| 臺大學術典藏 |
2018-09-10T14:58:05Z |
Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer
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Huang, C.-T.;Li, J.-Y.;Chou, K.S.;Sturm, J.C.; Huang, C.-T.; Li, J.-Y.; Chou, K.S.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:48:17Z |
Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition
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Li, J.-Y.;Huang, C.-T.;Rokhinson, L.P.;Sturm, J.C.; Li, J.-Y.; Huang, C.-T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:48:17Z |
Implant isolation of silicon two-dimensional electron gases at 4.2 K
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Huang, C.-T.;Li, J.-Y.;Sturm, J.C.; Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:48:16Z |
The effect of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases
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Li, J.-Y.;Sturm, J.C.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:48:16Z |
Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin sige cap layers
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JIUN-YUN LI; Sturm, J.C.; Li, J.-Y.; Huang, C.-T.; Huang, C.-T.;Li, J.-Y.;Sturm, J.C. |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition
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Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation
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Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
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