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"sturm j c"
Showing items 6-15 of 47 (5 Page(s) Totally)
1 2 3 4 5 > >>
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| 臺大學術典藏 |
2018-09-10T09:48:17Z |
Implant isolation of silicon two-dimensional electron gases at 4.2 K
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Huang, C.-T.;Li, J.-Y.;Sturm, J.C.; Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:48:16Z |
The effect of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases
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Li, J.-Y.;Sturm, J.C.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:48:16Z |
Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin sige cap layers
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JIUN-YUN LI; Sturm, J.C.; Li, J.-Y.; Huang, C.-T.; Huang, C.-T.;Li, J.-Y.;Sturm, J.C. |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition
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Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation
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Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD
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Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating
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Li, J.Y.; Huang, C.T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T07:37:20Z |
Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition
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Liu, C.W.; Tseng, Y.D.; Chern, M.Y.; Chang, C.L.; Sturm, J.C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T07:37:20Z |
Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD
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Li, J.-Y.;Sturm, J.C.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T07:29:05Z |
Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition
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Liu, C.W.; Tseng, Y.D.; Chern, M.Y.; Chang, C.L.; Sturm, J.C.; MING-YAU CHERN |
Showing items 6-15 of 47 (5 Page(s) Totally)
1 2 3 4 5 > >>
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