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Institution Date Title Author
國立交通大學 2017-04-21T06:48:22Z On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps Li, Yiming; Su, Hsin-Wen; Chen, Chieh-Yang; Cheng, Hui-Wen; Chen, Yu-Yu; Chang, Han-Tung
國立交通大學 2017-04-21T06:48:21Z Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-kappa/Metal Gate Bulk and SOI FinFETs Su, Hsin-Wen; Chen, Yu-Yu; Chen, Chieh-Yang; Cheng, Hui-Wen; Chang, Han-Tung; Li, Yiming
國立交通大學 2014-12-08T15:43:38Z Nanosized metal grains induced electrical characteristic fluctuation in 16-nm-gate high-kappa/metal gate bulk FinFET devices Li, Yiming; Cheng, Hui-Wen; Yiu, Chun-Yen; Su, Hsin-Wen
國立交通大學 2014-12-08T15:31:00Z The intrinsic parameter fluctuation on high-kappa/metal gate bulk FinFET devices Li, Yiming; Su, Hsin-Wen; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung
國立交通大學 2014-12-08T15:21:19Z A Unified 3D Device Simulation of Random Dopant, Interface Trap and Work Function Fluctuations on High-kappa/Metal Gate Device Li, Yiming; Cheng, Hui-Wen; Chiu, Yung-Yueh; Yiu, Chun-Yen; Su, Hsin-Wen

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