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机构 日期 题名 作者
國立成功大學 2006-05 Enhanced luminescence and reduced junction temperature in n-type modulation-doped AlGaInP multiquantum-well light-emitting diodes Lee, Chong-Yi; Yen, Chih-Hung; Su, Juh-Yuh; Lin, Hsen-Wen; Liu, Wen-Chau
國立成功大學 2004-08 Simulation and fabrication of InGaP/Al0.98Ga0.02As/GaAs oxide-confined collector-up heterojunction bipolar transistors Chen, Wen-Bin; Su, Yan-Kuin; Lin, Chun-Liang; Wang, Hsin-Chuan; Yu, Hsin-Chieh; Chen, Shi-Ming; Su, Juh-Yuh
國立成功大學 2003-12 Improved 634 nm MQW AlGaInP LEDs performance with novel tensile strain barrier reducing layer Su, Juh-Yuh; Wang, Hsin-Chuan; Chen, Wen-Bin; Chen, Shi-Ming; Wu, Meng-Chyi; Chen, Hao-Hui; Su, Yan-Kuin
國立成功大學 2003-10 Fabrication of InGaP/Al0.98Ga0.02As/GaAs oxide-confined collector-up heterojunction bipolar transistors Chen, Wen-Bin; Su, Yan-Kuin; Lin, C. L.; Wang, Hsin-Chuan; Chen, Shi-Ming; Su, Juh-Yuh; Wu, Meng-Chyi
國立成功大學 2003-05 Oxide confined collector-up heterojunction bipolar transistors Chen, Wen-Bin; Su, Yan-Kuin; Lin, Chun-Liang; Wang, Hsin-Chuan; Su, Juh-Yuh; Wu, Meng-Chi; Chen, Shi-Ming; Chen, Hong-Ren
國立成功大學 2003-04-14 Fabrication of oxide-confined collector-up heterojunction bipolar transistors Chen, Wen-Bin; Su, Yan-Kuin; Su, Juh-Yuh; Wu, Meng-Chi; Lin, Chun-Liang; Wang, Hsin-Chuan; Chen, Shi-Ming; Chen, Hong-Ren
國立成功大學 2003-03 AlGaInP light-emitting diode with tensile strain barrier reducing layer Su, Juh-Yuh; Wu, Meng-Chi; Chen, Wen-Bin; Su, Yan-Kun

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