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"su k h"的相关文件
显示项目 26-35 / 37 (共4页)
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| 國立東華大學 |
2007 |
Comparison of Al0.32Ga0.68N/GaN Heterostructure Field-Effect Transistors with Different Channel Thicknesses
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Lin,Y. S.; Su,K. H.; Wang,T. B.; Wu,Y. H.; Hsu,R. T.; Su, J. L.; Hsu,W. C. |
| 國立東華大學 |
2007 |
An “Improved symmetrically-graded doped-channel heterostructure field-effect transistor
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Lin,Y. S.; Wu,C.L.; Su,K. H.; Lee,C. S.; Chen,Y. J.; Hu,P. J.; Hsu,W. C. |
| 國立東華大學 |
2006-08 |
InP-based composite-collector double heterojunction bipolar transistor
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Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang,T. B.; Su,K. H. |
| 國立成功大學 |
2006-05-29 |
High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor
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Lee, C. S.; Chen, Y. J.; Hsu, Wei-Chou; Su, K. H.; Huang, J. C.; Huang, D. H.; Wu, C. L. |
| 國立成功大學 |
2006-04 |
Improved InAlGaP-based heterostructure field-effect transistors
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Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Wang, T. B.; Su, K. H.; Huang, J. C.; Ho, Ching-Hwa |
| 國立成功大學 |
2006-03 |
Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning
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Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Su, K. H.; Wang, T. B. |
| 國立東華大學 |
2006 |
Improved InAlGaP-based heterostructure field-effect transistors
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Lin,Y. S.; Huang,D. H.; Ho,C. H.; Huang,J. C.; Su,K. H.; Wang,T. B.; Hsu,W. C. |
| 國立東華大學 |
2006 |
Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistor using emitter edge-thinning
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Lin,Y. S.; Huang,D. H.; Wang,T. B.; Su,K. H.; Hsu,W. C. |
| 國立東華大學 |
2006 |
InP-based double heterojunction bipolar transistor with emitter edge-thinning
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Lin,Y. S.; Huang,D. H.; Wang,T. B.; Hsu,W. C.; Su,K. H.; Huang, J. C.; Yu,S. J. |
| 國立東華大學 |
2005-08 |
Electrical characteristics of -doping InGaP/GaAs heterojunction-emitter bipolar transistor
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Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang, T. B.; Su,K. H. |
显示项目 26-35 / 37 (共4页)
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