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"su p"
Showing items 16-25 of 29 (3 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:39:00Z |
Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs
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Chan, M; Su, P; Wan, H; Lin, CH; Fung, SKH; Niknejad, AM; Hu, CM; Ko, PK |
| 國立交通大學 |
2014-12-08T15:25:38Z |
Inversion MOS capacitance extraction for ultra-thin gate oxide using BSIM4
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Lee, W; Su, KW; Chiang, CS; Liu, S; Su, P |
| 國立交通大學 |
2014-12-08T15:24:57Z |
A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs
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Chen, William P. N.; Su, P.; Wang, J. S.; Lien, C. H.; Chang, C. H.; Goto, K.; Diaz, C. H. |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Modeling geometry-dependent floating-body effect using body-source built-in potential lowering for SOI circuit simulation
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Su, P; Lee, W |
| 國立交通大學 |
2014-12-08T15:18:50Z |
On the prediction of geometry-dependent floating-body effect in SOI MOSFETs
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Su, P; Lee, W |
| 國立交通大學 |
2014-12-08T15:17:14Z |
An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature
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Lee, W; Su, P; Chen, HY; Chang, CY; Su, KW; Liu, S; Yang, FL |
| 國立交通大學 |
2014-12-08T15:10:00Z |
Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
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Lee, W.; Su, P. |
| 國立交通大學 |
2014-12-08T15:03:11Z |
DEPENDENCE OF ELECTRON-MOBILITY ON DOPED IMPURITIES
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CHEN, YF; KWEI, CM; SU, P; TUNG, CJ |
| 國立交通大學 |
2014-12-08T15:03:07Z |
ANGULAR-DISTRIBUTION OF ELECTRONS ELASTICALLY BACKSCATTERED FROM NONCRYSTALLINE SOLID-SURFACES
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CHEN, YF; KWEI, CM; SU, P |
| 國立交通大學 |
2014-12-08T15:02:05Z |
Monte Carlo calculations of the reflection electron energy loss spectra in gold
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Kwei, CM; Su, P; Chen, YF; Tung, CJ |
Showing items 16-25 of 29 (3 Page(s) Totally)
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