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Taiwan Academic Institutional Repository >
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"su pin"
Showing items 181-190 of 199 (20 Page(s) Totally) << < 11 12 13 14 15 16 17 18 19 20 > >> View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:10:41Z |
Sensitivity of Gate-All-Around Nanowire MOSFETs to Process Variations-A Comparison With Multigate MOSFETs
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Wu, Yu-Sheng; Su, Pin |
| 國立交通大學 |
2014-12-08T15:10:19Z |
Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs
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Chen, William Po-Nien; Su, Pin; Goto, Ken-Ichi; Diaz, Carlos H. |
| 國立交通大學 |
2014-12-08T15:10:02Z |
A Comprehensive Investigation of Analog Performance for Uniaxial Strained PMOSFETs
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Kuo, Jack Jyun-Yan; Chen, William Po-Nien; Su, Pin |
| 國立交通大學 |
2014-12-08T15:09:42Z |
Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation
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Hu, Vita Pi-Ho; Wu, Yu-Sheng; Su, Pin |
| 國立交通大學 |
2014-12-08T15:09:23Z |
Impact of Uniaxial Strain on Low-Frequency Noise in Nanoscale PMOSFETs
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Kuo, Jack J. -Y.; Chen, William P. -N.; Su, Pin |
| 國立交通大學 |
2014-12-08T15:09:10Z |
A Comparative Study of Carrier Transport for Overlapped and Nonoverlapped Multiple-Gate SOI MOSFETs
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Lee, Wei; Su, Pin |
| 國立交通大學 |
2014-12-08T15:08:46Z |
Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells-An Assessment Based on Analytical Solutions of Poisson's Equation
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Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:08:39Z |
On the Experimental Determination of Channel Backscattering Characteristics-Limitation and Application for the Process Monitoring Purpose
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Lee, Wei; Su, Pin |
| 國立交通大學 |
2014-12-08T15:08:25Z |
Investigation of Channel Backscattering Characteristics in Nanoscale Uniaxial-Strained PMOSFETs
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Lee, Wei; Su, Pin |
| 國立交通大學 |
2014-12-08T15:08:20Z |
Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region
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Wu, Yu-Sheng; Su, Pin |
Showing items 181-190 of 199 (20 Page(s) Totally) << < 11 12 13 14 15 16 17 18 19 20 > >> View [10|25|50] records per page
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