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显示项目 146-195 / 199 (共4页)
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机构 日期 题名 作者
國立交通大學 2014-12-08T15:29:40Z Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:28:05Z Impacts of Random Telegraph Noise on FinFET Devices, 6T SRAM cell, and Logic Circuits Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:25:22Z Quantum Confinement Effect in Short-Channel Gate-All-Around MOSFETs and Its Impact on the Sensitivity of Threshold Voltage to Process Variations Wu, Yu-Sheng; Su, Pin
國立交通大學 2014-12-08T15:25:21Z Investigation of Static Noise Margin of FinFET SRAM Cells in Sub-threshold Region Fan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:25:09Z Temperature Dependences of RF Small-Signal Characteristics for the SOI Dynamic Threshold Voltage MOSFET Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Huang, Sheng-Yi; Hung, Cheng-Chou; Huang, Guo-Wei
國立交通大學 2014-12-08T15:25:08Z RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Lin, Chien-Ting; Liang, Victor; Huang, Guo-Wei
國立交通大學 2014-12-08T15:24:28Z Investigation of Low Frequency Noise in Uniaxial Strained PMOSFETs Kuo, Jack J. -Y.; Chen, William P. -N.; Su, Pin
國立交通大學 2014-12-08T15:24:25Z Investigation of Static Noise Margin of Ultra-Thin-Body SOI SRAM Cells in Subthreshold Region using Analytical Solution of Poisson's Equation Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:23:48Z "Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits" Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:23:33Z Independently-Controlled-Gate FinFET Schmitt Trigger Sub-Threshold SRAMs Hsieh, Chien-Yu; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:23:32Z Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs Yu, Chang-Hung; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin
國立交通大學 2014-12-08T15:22:22Z Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs Yu, Chang-Hung; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin
國立交通大學 2014-12-08T15:21:55Z Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Chen, Bo-Yuan; Huang, Guo-Wei
國立交通大學 2014-12-08T15:21:55Z Impact of Uniaxial Strain on Channel Backscattering Characteristics and Drain Current Variation for Nanoscale PMOSFETs Lee, Wei; Kuo, Jack J. -Y.; Chen, Willian P. -N.; Su, Pin; Jeng, Min-Chie
國立交通大學 2014-12-08T15:21:54Z A Closed-Form Quantum "Dark Space" Model for Predicting the Electrostatic Integrity of Germanium MOSFETs With High-k Gate Dielectric Wu, Yu-Sheng; Su, Pin
國立交通大學 2014-12-08T15:21:25Z Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:21:20Z Impacts of Single Trap Induced Random Telegraph Noise on FinFET Devices and SRAM Cell Stability Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:21:19Z Comprehensive Analysis of UTB GeOI Logic Circuits and 6T SRAM Cells considering Variability and Temperature Sensitivity Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:21:19Z Self-Heating Induced Feedback Effect on Drain Current Mismatch and Its Modeling Kuo, Jack J-Y.; Su, Pin
國立交通大學 2014-12-08T15:20:59Z Enhanced Temperature Dependence of Phonon-Scattering-Limited Mobility in Compressively Uniaxial Strained pMOSFETs Chen, William Po-Nien; Kuo, Jack Jyun-Yan; Su, Pin
國立交通大學 2014-12-08T15:19:54Z Design and Analysis of Ultra-Thin-Body SOI Based Subthreshold SRAM Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:16:47Z Investigation of scaling for multi-gate MOSFETs using analytical solution of 3-D Poisson's equation Wu, Yu-Sheng; Su, Pin
國立交通大學 2014-12-08T15:14:23Z Investigation of analogue performance for process-induced-strained PMOSFETs Kuo, Jack J-Y; Chen, William P-N; Su, Pin
國立交通大學 2014-12-08T15:14:12Z On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Lin, Chien-Ting; Liang, Victor; Huang, Guo-Wei
國立交通大學 2014-12-08T15:13:45Z On the enhanced impact ionization in uniaxial strained p-MOSFETs Su, Pin; Kuo, Jack J. -Y.
國立交通大學 2014-12-08T15:12:40Z Investigation of anomalous inversion C-V characteristics for long-channel MOSFETs with leaky dielectrics: Mechanisms and reconstruction Lee, Wei; Su, Pin; Su, Ke-Wei; Chiang, Chung-Shi; Liu, Sally
國立交通大學 2014-12-08T15:12:24Z Investigation of random dopant fluctuation for multi-gate metal-oxide-semiconductor field-effect transistors using analytical solutions of three-dimensional Poisson's equation Wu, Yu-Sheng; Su, Pin
國立交通大學 2014-12-08T15:12:12Z Sensitivity of multigate MOSFETs to process variations - An assessment based on analytical solutions of 3-D Poisson's equation Wu, Yu-Sheng; Su, Pin
國立交通大學 2014-12-08T15:12:04Z FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics Hu, Vita Pi-Ho; Fan, Ming-Long; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:12:04Z Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Chen, Bo-Yuan; Huang, Guo-Wei; Hung, Cheng-Chou; Huang, Sheng-Yi; Fan, Cheng-Wen; Tzeng, Chih-Yuh; Chou, Sam
國立交通大學 2014-12-08T15:12:03Z Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability-A Model-Based Approach Fan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:11:57Z Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET Hu, Vita Pi-Ho; Wu, Yu-Sheng; Su, Pin
國立交通大學 2014-12-08T15:11:16Z Impact of process-induced strain on Coulomb scattering mobility in short-channel n-MOSFETs Chen, William P. N.; Su, Pin; Goto, K.
國立交通大學 2014-12-08T15:11:07Z Temperature dependence of high frequency noise behaviors for RF MOSFETs Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Lin, Chien-Ting; Liang, Victor; Huang, Guo-Wei
國立交通大學 2014-12-08T15:10:57Z Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs Chen, William Po-Nien; Su, Pin; Goto, Ken-Ichi
國立交通大學 2014-12-08T15:10:41Z Sensitivity of Gate-All-Around Nanowire MOSFETs to Process Variations-A Comparison With Multigate MOSFETs Wu, Yu-Sheng; Su, Pin
國立交通大學 2014-12-08T15:10:19Z Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs Chen, William Po-Nien; Su, Pin; Goto, Ken-Ichi; Diaz, Carlos H.
國立交通大學 2014-12-08T15:10:02Z A Comprehensive Investigation of Analog Performance for Uniaxial Strained PMOSFETs Kuo, Jack Jyun-Yan; Chen, William Po-Nien; Su, Pin
國立交通大學 2014-12-08T15:09:42Z Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation Hu, Vita Pi-Ho; Wu, Yu-Sheng; Su, Pin
國立交通大學 2014-12-08T15:09:23Z Impact of Uniaxial Strain on Low-Frequency Noise in Nanoscale PMOSFETs Kuo, Jack J. -Y.; Chen, William P. -N.; Su, Pin
國立交通大學 2014-12-08T15:09:10Z A Comparative Study of Carrier Transport for Overlapped and Nonoverlapped Multiple-Gate SOI MOSFETs Lee, Wei; Su, Pin
國立交通大學 2014-12-08T15:08:46Z Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells-An Assessment Based on Analytical Solutions of Poisson's Equation Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:08:39Z On the Experimental Determination of Channel Backscattering Characteristics-Limitation and Application for the Process Monitoring Purpose Lee, Wei; Su, Pin
國立交通大學 2014-12-08T15:08:25Z Investigation of Channel Backscattering Characteristics in Nanoscale Uniaxial-Strained PMOSFETs Lee, Wei; Su, Pin
國立交通大學 2014-12-08T15:08:20Z Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region Wu, Yu-Sheng; Su, Pin
國立交通大學 2014-12-08T15:07:33Z Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin
國立交通大學 2014-12-08T15:07:17Z Investigation and Analysis of Mismatching Properties for Nanoscale Strained MOSFETs Kuo, Jack Jyun-Yan; Chen, William Po-Nien; Su, Pin
國立交通大學 2014-12-08T15:07:04Z Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave Applications Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Liao, Kuo-Hsiang; Chen, Bo-Yuan; Huang, Sheng-Yi; Hung, Cheng-Chou; Huang, Guo-Wei
國立交通大學 2014-12-08T15:06:58Z Impact of Process-Induced Uniaxial Strain on the Temperature Dependence of Carrier Mobility in Nanoscale pMOSFETs Chen, William P. N.; Kuo, Jack J. Y.; Su, Pin
國立交通大學 2014-12-08T15:06:58Z Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs Kuo, Jack J. -Y.; Chen, William P. -N.; Su, Pin

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