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"su pin"的相關文件
顯示項目 151-160 / 199 (共20頁) << < 11 12 13 14 15 16 17 18 19 20 > >> 每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:25:08Z |
RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs
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Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Lin, Chien-Ting; Liang, Victor; Huang, Guo-Wei |
| 國立交通大學 |
2014-12-08T15:24:28Z |
Investigation of Low Frequency Noise in Uniaxial Strained PMOSFETs
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Kuo, Jack J. -Y.; Chen, William P. -N.; Su, Pin |
| 國立交通大學 |
2014-12-08T15:24:25Z |
Investigation of Static Noise Margin of Ultra-Thin-Body SOI SRAM Cells in Subthreshold Region using Analytical Solution of Poisson's Equation
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Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:23:48Z |
"Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits"
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Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:23:33Z |
Independently-Controlled-Gate FinFET Schmitt Trigger Sub-Threshold SRAMs
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Hsieh, Chien-Yu; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:23:32Z |
Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs
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Yu, Chang-Hung; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin |
| 國立交通大學 |
2014-12-08T15:22:22Z |
Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs
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Yu, Chang-Hung; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin |
| 國立交通大學 |
2014-12-08T15:21:55Z |
Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs
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Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Chen, Bo-Yuan; Huang, Guo-Wei |
| 國立交通大學 |
2014-12-08T15:21:55Z |
Impact of Uniaxial Strain on Channel Backscattering Characteristics and Drain Current Variation for Nanoscale PMOSFETs
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Lee, Wei; Kuo, Jack J. -Y.; Chen, Willian P. -N.; Su, Pin; Jeng, Min-Chie |
| 國立交通大學 |
2014-12-08T15:21:54Z |
A Closed-Form Quantum "Dark Space" Model for Predicting the Electrostatic Integrity of Germanium MOSFETs With High-k Gate Dielectric
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Wu, Yu-Sheng; Su, Pin |
顯示項目 151-160 / 199 (共20頁) << < 11 12 13 14 15 16 17 18 19 20 > >> 每頁顯示[10|25|50]項目
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