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Showing items 141-150 of 199 (20 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:30:30Z |
Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells
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Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:25Z |
Design and Analysis of Robust Tunneling FET SRAM
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Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:22Z |
Investigation and Comparison of Work Function Variation for FinFET and UTB SOI Devices Using a Voronoi Approach
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Chou, Shao-Heng; Fan, Ming-Long; Su, Pin |
| 國立交通大學 |
2014-12-08T15:30:04Z |
Variation Tolerant CLSAs for Nanoscale Bulk-CMOS and FinFET SRAM
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Tsai, Ming-Fu; Tsai, Jen-Huan; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:03Z |
A Comprehensive Comparative Analysis of FinFET and Trigate Device, SRAM and Logic Circuits
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Pao, Chia-Hao; Fan, Ming-Long; Tsai, Ming-Fu; Chen, Yin-Nien; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:29:40Z |
Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications
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Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:28:05Z |
Impacts of Random Telegraph Noise on FinFET Devices, 6T SRAM cell, and Logic Circuits
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Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:25:22Z |
Quantum Confinement Effect in Short-Channel Gate-All-Around MOSFETs and Its Impact on the Sensitivity of Threshold Voltage to Process Variations
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Wu, Yu-Sheng; Su, Pin |
| 國立交通大學 |
2014-12-08T15:25:21Z |
Investigation of Static Noise Margin of FinFET SRAM Cells in Sub-threshold Region
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Fan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:25:09Z |
Temperature Dependences of RF Small-Signal Characteristics for the SOI Dynamic Threshold Voltage MOSFET
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Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Huang, Sheng-Yi; Hung, Cheng-Chou; Huang, Guo-Wei |
Showing items 141-150 of 199 (20 Page(s) Totally)
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