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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
國立交通大學 2019-04-02T05:58:09Z Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te
國立交通大學 2018-08-21T05:56:55Z Ultra-Low Voltage Mixed TFET-MOSFET 8T SRAM Cell Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te
國立交通大學 2018-08-21T05:56:52Z Impacts of Work Function Variation and Line Edge Roughness on Hybrid TFET-MOSFET Monolithic 3D SRAMs Wang, Jian-Hao; Su, Pin; Chuang, Ching-Te
國立交通大學 2018-08-21T05:56:52Z Evaluation of Analog Performance of Monolayer and Bilayer Two-Dimensional Transition Metal Dichalcogenide (TMD) MOSFETs Lee, Hung-Yi; Yu, Chang-Hung; Su, Pin; Chuang, Ching-Te
國立交通大學 2018-08-21T05:56:52Z Performance Evaluation of Pass-Transistor-Based Circuits using Monolayer and Bilayer 2-D Transition Metal Dichalcogenide (TMD) MOSFETs for 5.9nm Node Yu, Chang-Hung; Zheng, Jun-Teng; Su, Pin; Chuang, Ching-Te
國立交通大學 2018-08-21T05:56:52Z Investigation and Comparison of Design Space for Ultra-Thin-Body GeOI/SOI Negative Capacitance FETs Lee, Ho-Pei; Yu, Chien-Lin; You, Wei-Xiang; Su, Pin
國立交通大學 2018-08-21T05:56:52Z Exploration and Evaluation of TCAM with Hybrid Tunneling FET and FinFET Devices for Ultra-Low-Voltage Applications Tu, Meng-Hsuan; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te
國立交通大學 2018-08-21T05:56:52Z Design Space Exploration Considering Back-Gate Biasing Effects for Negative-Capacitance Transition-Metal-Dichalcogenide (TMD) Field-Effect Transistors You, Wei-Xiang; Su, Pin
國立交通大學 2018-08-21T05:54:20Z Design Space Exploration Considering Back-Gate Biasing Effects for 2D Negative-Capacitance Field-Effect Transistors You, Wei-Xiang; Su, Pin
國立交通大學 2018-08-21T05:53:58Z Performance and Stability Benchmarking of Monolithic 3-D Logic Circuits and SRAM Cells With Monolayer and Few-Layer Transition Metal Dichalcogenide MOSFETs Yu, Chang-Hung; Su, Pin; Chuang, Ching-Te

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