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Institution Date Title Author
國立交通大學 2018-08-21T05:53:24Z Analysis of In-Line Process Parameters of the Unity Gain Frequency of HKMG Bulk FinFET Devices Su, Ping-Hsun; Li, Yiming
國立交通大學 2018-08-21T05:53:17Z Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors Mizubayashi, Wataru; Noda, Shuichi; Ishikawa, Yuki; Nishi, Takashi; Kikuchi, Akio; Ota, Hiroyuki; Su, Ping-Hsun; Li, Yiming; Samukawa, Seiji; Endo, Kazuhiko
國立交通大學 2018-01-24T07:38:29Z 高介電材料金屬閘極塊材鰭式場效應電晶體製程參數分析與電特性建模之研究 蘇炳熏; 李義明; Su,Ping-Hsun; Li, Yiming
國立交通大學 2017-04-21T06:56:23Z Exploration of Inter-Die Bulk Fin-Typed Field Effect Transistor Process Variation for Reduction of Device Variability Su, Ping-Hsun; Li, Yiming
國立交通大學 2017-04-21T06:56:23Z A Systematic Approach to Correlation Analysis of In-Line Process Parameters for Process Variation Effect on Electrical Characteristic of 16-nm HKMG Bulk FinFET Devices Su, Ping-Hsun; Li, Yiming
國立交通大學 2017-04-21T06:55:39Z Process-Dependence Analysis for Characteristic Improvement of Ring Oscillator Using 16-nm Bulk FinFET Devices Su, Ping-Hsun; Li, Yiming
國立交通大學 2017-04-21T06:48:52Z Process Technological Analysis for Dynamic Characteristic Improvement of 16-nm HKMG Bulk FinFET CMOS Circuits Su, Ping-Hsun; Li, Yiming
國立交通大學 2015-07-21T08:31:14Z Design Optimization of 16-nm Bulk FinFET Technology via Geometric Programming Su, Ping-Hsun; Li, Yiming
國立交通大學 2015-07-21T08:29:54Z Source/Drain Series Resistance Extraction in HKMG Multifin Bulk FinFET Devices Su, Ping-Hsun; Li, Yiming
國立交通大學 2015-07-21T08:29:33Z Determination of Source-and-Drain Series Resistance in 16-nm-Gate FinFET Devices Su, Ping-Hsun; Li, Yiming

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