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Showing items 61-70 of 86  (9 Page(s) Totally)
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Institution Date Title Author
國立虎尾科技大學 2006 High brightness OLED with dual emitting layers Shen, Weng-Chang;Su, Y. K.;Ji, Liang-Wen
國立高雄應用科技大學 2005 Self-formation of GaN hollow nanocolumns by inductively coupled plasma etching HUNG, S.C.; SU, Y.K.; CHANG, S.J.; CHEN, S.C.; JI, L.W.; FANG, T.H.; TU, L.W.; CHEN, M.
國立虎尾科技大學 2005 GaN nanocolumns formed by inductively coupled plasmas etching Hung, S.C.;Su, Y.K.;Chang, S.J.;Chen, S.C.;Fang, T.H.;Ji, L.W.
國立虎尾科技大學 2005 GaN nanocolumns formed by inductively coupled plasmas etching Hung, S.C.;Su, Y.K.;Chang, S.J.;Chen, S.C.;Fang, T.H.;Ji, L.W.
國立成功大學 2004 Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers Chang, S. J.; Wu, L. W.; Su, Y. K.; Hsu, Y. P.; Lai, W. C.; Tsai, J. A.; �Sheu,� Jinn-Kong; Lee C.T
國立成功大學 2003-06-25 High transconductance nitride MOSHFETs Liu, C. H.; Wang, C. K.; Chang, Shoou-Jinn; Su, Y. K.
國立成功大學 2003 High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode Chang, C. S.; �Sheu, �Jinn-Kong; Su, Y. K.; Lai, W. C.; Kuo, C. H.; Wang, C. K.; Lin, Y. C.; Hsu, Y. P.; Shei, S. C.; Lo, H. M.; J. C. Ke; J. K. Sheu
國立成功大學 2003 Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi
國立成功大學 2003 Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen
國立成功大學 2003 MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates Chang, S. J.; Su, Y. K.; Lin, Y. C.; Chuang, R. W.; Chang, C. S.; �Sheu, �Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H.

Showing items 61-70 of 86  (9 Page(s) Totally)
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