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機構	日期	題名	作者
國立成功大學	2017	Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon	Lin, C.-Y.;Zhu, X.;Tsai, S.-H.;Tsai, S.-P.;Lei, S.;Shi, Y.;Li, Li L.-J.;Huang, S.-J.;Wu, Wu W.-F.;Yeh, W.-K.;Su, Y.-K.;Wang, K.L.;Lan, Y.-W.
國立成功大學	2016-07	LOW DRIVING VOLTAGE FOR FLEXIBLE ORGANIC LIGHT EMITTING DIODES BASED ON TRANSPARENT ANODE	Rao, M. V. Madhava; Su, Y. K.; Liu, Y. C.; Huang, T. S.
國立交通大學	2014-12-08T15:14:50Z	GaN-based light-emitting diodes prepared on vicinal sapphire substrates	Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Cheng, Y. C.; Lin, W. J.
國立交通大學	2014-12-08T15:13:14Z	High responsivity of GaN p-i-n photodiode by using low-temperature interlayer	Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Huang, C. Y.; Lai, W. C.; Lin, W. J.; Cheng, Y. C.
國立交通大學	2014-12-08T15:12:49Z	Improved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened surface	Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Cheng, Y. C.; Lin, W. J.
國立交通大學	2014-12-08T15:12:23Z	GaN p-i-n photodetectors with an LT-GaN interlayer	Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Lan, C. H.; Huang, C. C.; Lin, W. J.; Cheng, Y. C.
國立交通大學	2014-12-08T15:11:17Z	Low dark current GaN p-i-n photodetectors with a low-temperature AIN interlayer	Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Chen, W. R.; Huang, K. C.; Cheng, Y. C.; Lin, W. J.
國立成功大學	2014	Low-Frequency Noise Characteristics of Gallium-Doped ZnO Nanosheets as Photodetectors	Yang, C. C.; Su, Y. K.; Hsiao, C. H.; Kao, T. H.; Peng, Y. M.; Chuang, M. Y.; Wang, B. C.; Wu, S. L.
國立成功大學	2013-05-01	Optical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum well structure grown by metal-organic vapor phase epitaxy	Huang, C. T.; Wu, J. D.; Liu, C. F.; Huang, Y. S.; Wan, C. T.; Su, Y. K.; Tiong, K. K.
國立成功大學	2013-05-01	1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE	Wu, T. H.; Su, Y. K.; Chuang, R. W.; Huang, C. Y.; Wu, H. J.; Lin, Y. C.
國立臺灣科技大學	2013	Contactless electroreflectance and photoluminescence study of the sb surfactant effects on InGaAsN multiple quantum wells	Hsu, H.P.;Huang, J.K.;Huang, Y.S.;Lin, D.Y.;Chen, W.C.;Su, Y.K.
國立臺灣科技大學	2013	Optical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum well structure grown by metal-organic vapor phase epitaxy	Huang, C.T.;Wu, J.D.;Liu, C.F.;Huang, Y.S.;Wan, C.T.;Su, Y.K.;Tiong, K.K.
國立臺灣科技大學	2013	Regime-switching in volatility and correlation structure using range-based models with Markov-switching	Miao, D.W.C.;Wu, C.-C.;Su, Y.-K.
國立成功大學	2013	Cesium Carbonate as an Effective Interfacial Layer on the High Performance of Polymer Light-Emitting Devices	Rao, Mora Veera Madhava; Su, Y. K.; Huang, T. S.
國立成功大學	2012-06-15	Optical characterization of a strain-compensated GaAs0.64Sb0.36/GaAs0.79P0.21 quantum well structure grown by metal organic vapor phase epitaxy	Huang, C. T.; Wu, J. D.; Liu, C. F.; Huang, Y. S.; Wan, C. T.; Su, Y. K.; Tiong, K. K.
國立成功大學	2012-06	AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric	Lee, K. H.; Chang, P. C.; Chang, S. J.; Su, Y. K.
國立臺灣科技大學	2012	Optical characterization of a strain-compensated GaAs 0.64Sb 0.36/GaAs 0.79P 0.21 quantum well structure grown by metal organic vapor phase epitaxy	Huang, C.T.;Wu, J.D.;Liu, C.F.;Huang, Y.S.;Wan, C.T.;Su, Y.K.;Tiong, K.K.
國立臺灣科技大學	2012	The influence of direct cross-straits shipping on the smooth transition dynamics of stock volatilities of shipping companies	Liu, H.-H.;Wu, C.-C.;Su, Y.K.
國立成功大學	2012	New compact tri-band bandpass filter with transmission zeros designed by using stub-loaded resonators	Ye, C. -S.; Su, Y. -K.; Weng, M. -H.
國立成功大學	2011-09-29	Nanocrystalline silicon thickness dependence of transmission characteristics of CPWs on surface-passivated high-resistivity silicon substrates	Wang, R. -L.; Su, Y. -K.; Chen, C. -J.; Hsueh, T. -J.
國立成功大學	2011-07-01	Laser Scribing of Sapphire Substrate to Increase Side Light Extraction of GaN-Based Light Emitting Diodes	Chen, K. C.; Su, Y. K.; Lin, Chun-Liang; Hsu, H. C.
國立成功大學	2011-07	Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer	Kao, C. C.; Su, Y. K.; Lin, C. L.
義守大學	2009-07	Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2	Chang, P.C.;Su, Y.K.; Lee, K.J.;Yu, C.L.;Chang, S.J.;Liu, C.H.
國立臺灣科技大學	2009	Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy	Chan C.H.; Wu J.D.; Huang Y.S.; Su Y.K.; Tiong K.K.
國立臺灣科技大學	2007	Contactless electroreflectance and photoluminescence study of highly strained InGaAs(Sb) double quantum wells	Hsu H.P.; Korotcov A.; Huang Y.S.; Chen W.C.; Su Y.K.; Tiong K.K.

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