臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
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Institution	Date	Title	Author
國立交通大學	2014-12-08T15:12:23Z	GaN p-i-n photodetectors with an LT-GaN interlayer	Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Lan, C. H.; Huang, C. C.; Lin, W. J.; Cheng, Y. C.
國立交通大學	2014-12-08T15:11:17Z	Low dark current GaN p-i-n photodetectors with a low-temperature AIN interlayer	Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Chen, W. R.; Huang, K. C.; Cheng, Y. C.; Lin, W. J.
國立成功大學	2014	Low-Frequency Noise Characteristics of Gallium-Doped ZnO Nanosheets as Photodetectors	Yang, C. C.; Su, Y. K.; Hsiao, C. H.; Kao, T. H.; Peng, Y. M.; Chuang, M. Y.; Wang, B. C.; Wu, S. L.
國立成功大學	2013-05-01	Optical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum well structure grown by metal-organic vapor phase epitaxy	Huang, C. T.; Wu, J. D.; Liu, C. F.; Huang, Y. S.; Wan, C. T.; Su, Y. K.; Tiong, K. K.
國立成功大學	2013-05-01	1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE	Wu, T. H.; Su, Y. K.; Chuang, R. W.; Huang, C. Y.; Wu, H. J.; Lin, Y. C.
國立臺灣科技大學	2013	Contactless electroreflectance and photoluminescence study of the sb surfactant effects on InGaAsN multiple quantum wells	Hsu, H.P.;Huang, J.K.;Huang, Y.S.;Lin, D.Y.;Chen, W.C.;Su, Y.K.
國立臺灣科技大學	2013	Optical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum well structure grown by metal-organic vapor phase epitaxy	Huang, C.T.;Wu, J.D.;Liu, C.F.;Huang, Y.S.;Wan, C.T.;Su, Y.K.;Tiong, K.K.
國立臺灣科技大學	2013	Regime-switching in volatility and correlation structure using range-based models with Markov-switching	Miao, D.W.C.;Wu, C.-C.;Su, Y.-K.
國立成功大學	2013	Cesium Carbonate as an Effective Interfacial Layer on the High Performance of Polymer Light-Emitting Devices	Rao, Mora Veera Madhava; Su, Y. K.; Huang, T. S.
國立成功大學	2012-06-15	Optical characterization of a strain-compensated GaAs0.64Sb0.36/GaAs0.79P0.21 quantum well structure grown by metal organic vapor phase epitaxy	Huang, C. T.; Wu, J. D.; Liu, C. F.; Huang, Y. S.; Wan, C. T.; Su, Y. K.; Tiong, K. K.
國立成功大學	2012-06	AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric	Lee, K. H.; Chang, P. C.; Chang, S. J.; Su, Y. K.
國立臺灣科技大學	2012	Optical characterization of a strain-compensated GaAs 0.64Sb 0.36/GaAs 0.79P 0.21 quantum well structure grown by metal organic vapor phase epitaxy	Huang, C.T.;Wu, J.D.;Liu, C.F.;Huang, Y.S.;Wan, C.T.;Su, Y.K.;Tiong, K.K.
國立臺灣科技大學	2012	The influence of direct cross-straits shipping on the smooth transition dynamics of stock volatilities of shipping companies	Liu, H.-H.;Wu, C.-C.;Su, Y.K.
國立成功大學	2012	New compact tri-band bandpass filter with transmission zeros designed by using stub-loaded resonators	Ye, C. -S.; Su, Y. -K.; Weng, M. -H.
國立成功大學	2011-09-29	Nanocrystalline silicon thickness dependence of transmission characteristics of CPWs on surface-passivated high-resistivity silicon substrates	Wang, R. -L.; Su, Y. -K.; Chen, C. -J.; Hsueh, T. -J.
國立成功大學	2011-07-01	Laser Scribing of Sapphire Substrate to Increase Side Light Extraction of GaN-Based Light Emitting Diodes	Chen, K. C.; Su, Y. K.; Lin, Chun-Liang; Hsu, H. C.
國立成功大學	2011-07	Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer	Kao, C. C.; Su, Y. K.; Lin, C. L.
義守大學	2009-07	Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2	Chang, P.C.;Su, Y.K.; Lee, K.J.;Yu, C.L.;Chang, S.J.;Liu, C.H.
國立臺灣科技大學	2009	Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy	Chan C.H.; Wu J.D.; Huang Y.S.; Su Y.K.; Tiong K.K.
國立臺灣科技大學	2007	Contactless electroreflectance and photoluminescence study of highly strained InGaAs(Sb) double quantum wells	Hsu H.P.; Korotcov A.; Huang Y.S.; Chen W.C.; Su Y.K.; Tiong K.K.
國立東華大學	2006	1.3-um InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE	祁錦雲; Jim-Yong Chi; Yu, H.C.; Wang, J.S.; Su, Y.K.; Chang, S.J.; Lai, F.I.; Chang, Y.H.; Kuo, H.C.; Sung, C.P.; Yang, H.P.D.; Lin, K.F.; Wang, J.M.; Hsiao, R.S.; Mikhrin, S.
國立高雄應用科技大學	2006	Shell buckling behavior investigation of individual gallium nitride hollow nanocolumn	HUNG, S.-C.; SU, Y.-K.; FANG, T.-H.; CHANG, S.-J.
國立虎尾科技大學	2006	Shell buckling behavior investigation of individual gallium nitride hollow nanocolumn	Hung, S.-C.;Su, Y.-K.;Fang, T.-H.;Chang, S.-J.
國立虎尾科技大學	2006	ZnO ultraviolet photodiodes with Pd contact electrodes	Young, S. J.;Ji, L. W.;Fang, T. H.;Chang, S. J.;Su, Y. K.;Du, X. L.
國立虎尾科技大學	2006	ZnO Metal-Semiconductor-Metal Ultraviolet Sensors with Various Contact Electrodes	Young, S.J.;Ji, L.W.;Chang, S.J.;Su, Y.K.
國立虎尾科技大學	2006	High brightness OLED with dual emitting layers	Shen, Weng-Chang;Su, Y. K.;Ji, Liang-Wen
國立高雄應用科技大學	2005	Self-formation of GaN hollow nanocolumns by inductively coupled plasma etching	HUNG, S.C.; SU, Y.K.; CHANG, S.J.; CHEN, S.C.; JI, L.W.; FANG, T.H.; TU, L.W.; CHEN, M.
國立虎尾科技大學	2005	GaN nanocolumns formed by inductively coupled plasmas etching	Hung, S.C.;Su, Y.K.;Chang, S.J.;Chen, S.C.;Fang, T.H.;Ji, L.W.
國立虎尾科技大學	2005	GaN nanocolumns formed by inductively coupled plasmas etching	Hung, S.C.;Su, Y.K.;Chang, S.J.;Chen, S.C.;Fang, T.H.;Ji, L.W.
國立成功大學	2004	Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers	Chang, S. J.; Wu, L. W.; Su, Y. K.; Hsu, Y. P.; Lai, W. C.; Tsai, J. A.; �Sheu,� Jinn-Kong; Lee C.T
國立成功大學	2003-06-25	High transconductance nitride MOSHFETs	Liu, C. H.; Wang, C. K.; Chang, Shoou-Jinn; Su, Y. K.
國立成功大學	2003	High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode	Chang, C. S.; �Sheu, �Jinn-Kong; Su, Y. K.; Lai, W. C.; Kuo, C. H.; Wang, C. K.; Lin, Y. C.; Hsu, Y. P.; Shei, S. C.; Lo, H. M.; J. C. Ke; J. K. Sheu
國立成功大學	2003	Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer	Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi
國立成功大學	2003	Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers	Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen
國立成功大學	2003	MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates	Chang, S. J.; Su, Y. K.; Lin, Y. C.; Chuang, R. W.; Chang, C. S.; �Sheu, �Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H.
國立成功大學	2003	Low-dark-current GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layer	Chang, S. J.; Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Su, Y. K.; Chang, C. S.; Kao, C. J.; Chi, G. C.; Tsai, J. M.
國立成功大學	2003	Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer	Kuo, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; �Sheu, �Jinn-Kong; Tsai, J. M.
國立成功大學	2003	Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer	�Sheu, �Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, G. C.; Chang, S. J.; Su, Y. K.; Tsai, J. M.
國立成功大學	2003	Nitride-based near UV MQW LEDs with AlGaN barrier layers	Chang, S. J.; Kuo, C. H.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Chen, J. F.; Tsai, J. M.
國立成功大學	2002	GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes	Chen, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; Tsai, J. M.
國立成功大學	2002	Low dark current GaN-based PIN ultraviolet photodetector with AlGaN/GaN superlattice p-layer structure	Yeh, L. S.; Lee, M. L.; �Sheu, �Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, G. C.; Chang, S. J.; Su, Y. K.
國立成功大學	2001	Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer	�Sheu, �Jinn-Kong; Tsai, J. M.; Shei, S. C.; Lai, W. C.; Wen, T. C.; Kuo, C. H.; Su, Y. K.; Chang, S. J.; Chi, G. C.
國立成功大學	1999-12	GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy	Chang, J. R.; Su, Y. K.; Lu, Yan-Ten
國立成功大學	1999-02	Determination of the valence-band offset for GaInAsSb/InP heterostructure	Chang, J. R.; Su, Y. K.; Lu, Y. T.; Jaw, D. H.; Shiao, H. P.; Lin, W.
國立成功大學	1999	Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy	Chang, J. R.; Su, Y. K.; Lin, C. L.; Wu, K. M.; Huang, W. C.; Lu, Y. T.; Jaw, D. H.; Li, W. L.; Chen, S. M.
國立高雄應用科技大學	1998-12	8~14 μm Normal Incident Optical Transition in GaSb/InAs Superlattices	YU, C.F.;Chen, S.M.;Su, Y.K.
國立臺灣大學	1998	Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs	Kuo, C. W.; Su, Y. K.; Lin, H. H.; Tsia, C. Y.
國立成功大學	1997-12	AlGaInP multiquantum well light-emitting diodes	Chang, Shoou-Jinn; Chang, C. S.; Su, Y. K.; Chang, P. T.; Wu, Y. R.; Huang, K. H.; Chen, T. P.
國立成功大學	1996	Doping Effects on Normal Incidence Interband and Intersubband Optical Tranistioin on GaSb/InAs Superlattices	Chen, S. M.; Su, Y. K.; Lu, Yan-Ten
國立成功大學	1996	8-14 m m Normal Incident Optical Transition in GaSb/InAs Superlattices	Chen, S. M.; Su, Y. K.; Lu, Yan-Ten

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