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"su y k"的相關文件
顯示項目 46-70 / 86 (共4頁)
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| 國立成功大學 |
2012-06 |
AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric
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Lee, K. H.; Chang, P. C.; Chang, S. J.; Su, Y. K. |
| 國立臺灣科技大學 |
2012 |
Optical characterization of a strain-compensated GaAs 0.64Sb 0.36/GaAs 0.79P 0.21 quantum well structure grown by metal organic vapor phase epitaxy
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Huang, C.T.;Wu, J.D.;Liu, C.F.;Huang, Y.S.;Wan, C.T.;Su, Y.K.;Tiong, K.K. |
| 國立臺灣科技大學 |
2012 |
The influence of direct cross-straits shipping on the smooth transition dynamics of stock volatilities of shipping companies
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Liu, H.-H.;Wu, C.-C.;Su, Y.K. |
| 國立成功大學 |
2012 |
New compact tri-band bandpass filter with transmission zeros designed by using stub-loaded resonators
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Ye, C. -S.; Su, Y. -K.; Weng, M. -H. |
| 國立成功大學 |
2011-09-29 |
Nanocrystalline silicon thickness dependence of transmission characteristics of CPWs on surface-passivated high-resistivity silicon substrates
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Wang, R. -L.; Su, Y. -K.; Chen, C. -J.; Hsueh, T. -J. |
| 國立成功大學 |
2011-07-01 |
Laser Scribing of Sapphire Substrate to Increase Side Light Extraction of GaN-Based Light Emitting Diodes
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Chen, K. C.; Su, Y. K.; Lin, Chun-Liang; Hsu, H. C. |
| 國立成功大學 |
2011-07 |
Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer
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Kao, C. C.; Su, Y. K.; Lin, C. L. |
| 義守大學 |
2009-07 |
Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2
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Chang, P.C.;Su, Y.K.; Lee, K.J.;Yu, C.L.;Chang, S.J.;Liu, C.H. |
| 國立臺灣科技大學 |
2009 |
Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy
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Chan C.H.; Wu J.D.; Huang Y.S.; Su Y.K.; Tiong K.K. |
| 國立臺灣科技大學 |
2007 |
Contactless electroreflectance and photoluminescence study of highly strained InGaAs(Sb) double quantum wells
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Hsu H.P.; Korotcov A.; Huang Y.S.; Chen W.C.; Su Y.K.; Tiong K.K. |
| 國立東華大學 |
2006 |
1.3-um InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
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祁錦雲; Jim-Yong Chi; Yu, H.C.; Wang, J.S.; Su, Y.K.; Chang, S.J.; Lai, F.I.; Chang, Y.H.; Kuo, H.C.; Sung, C.P.; Yang, H.P.D.; Lin, K.F.; Wang, J.M.; Hsiao, R.S.; Mikhrin, S. |
| 國立高雄應用科技大學 |
2006 |
Shell buckling behavior investigation of individual gallium nitride hollow nanocolumn
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HUNG, S.-C.; SU, Y.-K.; FANG, T.-H.; CHANG, S.-J. |
| 國立虎尾科技大學 |
2006 |
Shell buckling behavior investigation of individual gallium nitride hollow nanocolumn
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Hung, S.-C.;Su, Y.-K.;Fang, T.-H.;Chang, S.-J. |
| 國立虎尾科技大學 |
2006 |
ZnO ultraviolet photodiodes with Pd contact electrodes
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Young, S. J.;Ji, L. W.;Fang, T. H.;Chang, S. J.;Su, Y. K.;Du, X. L. |
| 國立虎尾科技大學 |
2006 |
ZnO Metal-Semiconductor-Metal Ultraviolet Sensors with Various Contact Electrodes
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Young, S.J.;Ji, L.W.;Chang, S.J.;Su, Y.K. |
| 國立虎尾科技大學 |
2006 |
High brightness OLED with dual emitting layers
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Shen, Weng-Chang;Su, Y. K.;Ji, Liang-Wen |
| 國立高雄應用科技大學 |
2005 |
Self-formation of GaN hollow nanocolumns by inductively coupled plasma etching
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HUNG, S.C.; SU, Y.K.; CHANG, S.J.; CHEN, S.C.; JI, L.W.; FANG, T.H.; TU, L.W.; CHEN, M. |
| 國立虎尾科技大學 |
2005 |
GaN nanocolumns formed by inductively coupled plasmas etching
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Hung, S.C.;Su, Y.K.;Chang, S.J.;Chen, S.C.;Fang, T.H.;Ji, L.W. |
| 國立虎尾科技大學 |
2005 |
GaN nanocolumns formed by inductively coupled plasmas etching
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Hung, S.C.;Su, Y.K.;Chang, S.J.;Chen, S.C.;Fang, T.H.;Ji, L.W. |
| 國立成功大學 |
2004 |
Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers
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Chang, S. J.; Wu, L. W.; Su, Y. K.; Hsu, Y. P.; Lai, W. C.; Tsai, J. A.; �Sheu,� Jinn-Kong; Lee C.T |
| 國立成功大學 |
2003-06-25 |
High transconductance nitride MOSHFETs
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Liu, C. H.; Wang, C. K.; Chang, Shoou-Jinn; Su, Y. K. |
| 國立成功大學 |
2003 |
High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode
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Chang, C. S.; �Sheu, �Jinn-Kong; Su, Y. K.; Lai, W. C.; Kuo, C. H.; Wang, C. K.; Lin, Y. C.; Hsu, Y. P.; Shei, S. C.; Lo, H. M.; J. C. Ke; J. K. Sheu |
| 國立成功大學 |
2003 |
Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer
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Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi |
| 國立成功大學 |
2003 |
Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers
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Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen |
| 國立成功大學 |
2003 |
MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates
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Chang, S. J.; Su, Y. K.; Lin, Y. C.; Chuang, R. W.; Chang, C. S.; �Sheu, �Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H. |
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