臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
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Institution	Date	Title	Author
國立成功大學	2011-07-01	Laser Scribing of Sapphire Substrate to Increase Side Light Extraction of GaN-Based Light Emitting Diodes	Chen, K. C.; Su, Y. K.; Lin, Chun-Liang; Hsu, H. C.
國立成功大學	2011-07	Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer	Kao, C. C.; Su, Y. K.; Lin, C. L.
義守大學	2009-07	Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2	Chang, P.C.;Su, Y.K.; Lee, K.J.;Yu, C.L.;Chang, S.J.;Liu, C.H.
國立臺灣科技大學	2009	Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy	Chan C.H.; Wu J.D.; Huang Y.S.; Su Y.K.; Tiong K.K.
國立臺灣科技大學	2007	Contactless electroreflectance and photoluminescence study of highly strained InGaAs(Sb) double quantum wells	Hsu H.P.; Korotcov A.; Huang Y.S.; Chen W.C.; Su Y.K.; Tiong K.K.
國立東華大學	2006	1.3-um InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE	祁錦雲; Jim-Yong Chi; Yu, H.C.; Wang, J.S.; Su, Y.K.; Chang, S.J.; Lai, F.I.; Chang, Y.H.; Kuo, H.C.; Sung, C.P.; Yang, H.P.D.; Lin, K.F.; Wang, J.M.; Hsiao, R.S.; Mikhrin, S.
國立高雄應用科技大學	2006	Shell buckling behavior investigation of individual gallium nitride hollow nanocolumn	HUNG, S.-C.; SU, Y.-K.; FANG, T.-H.; CHANG, S.-J.
國立虎尾科技大學	2006	Shell buckling behavior investigation of individual gallium nitride hollow nanocolumn	Hung, S.-C.;Su, Y.-K.;Fang, T.-H.;Chang, S.-J.
國立虎尾科技大學	2006	ZnO ultraviolet photodiodes with Pd contact electrodes	Young, S. J.;Ji, L. W.;Fang, T. H.;Chang, S. J.;Su, Y. K.;Du, X. L.
國立虎尾科技大學	2006	ZnO Metal-Semiconductor-Metal Ultraviolet Sensors with Various Contact Electrodes	Young, S.J.;Ji, L.W.;Chang, S.J.;Su, Y.K.
國立虎尾科技大學	2006	High brightness OLED with dual emitting layers	Shen, Weng-Chang;Su, Y. K.;Ji, Liang-Wen
國立高雄應用科技大學	2005	Self-formation of GaN hollow nanocolumns by inductively coupled plasma etching	HUNG, S.C.; SU, Y.K.; CHANG, S.J.; CHEN, S.C.; JI, L.W.; FANG, T.H.; TU, L.W.; CHEN, M.
國立虎尾科技大學	2005	GaN nanocolumns formed by inductively coupled plasmas etching	Hung, S.C.;Su, Y.K.;Chang, S.J.;Chen, S.C.;Fang, T.H.;Ji, L.W.
國立虎尾科技大學	2005	GaN nanocolumns formed by inductively coupled plasmas etching	Hung, S.C.;Su, Y.K.;Chang, S.J.;Chen, S.C.;Fang, T.H.;Ji, L.W.
國立成功大學	2004	Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers	Chang, S. J.; Wu, L. W.; Su, Y. K.; Hsu, Y. P.; Lai, W. C.; Tsai, J. A.; �Sheu,� Jinn-Kong; Lee C.T
國立成功大學	2003-06-25	High transconductance nitride MOSHFETs	Liu, C. H.; Wang, C. K.; Chang, Shoou-Jinn; Su, Y. K.
國立成功大學	2003	High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode	Chang, C. S.; �Sheu, �Jinn-Kong; Su, Y. K.; Lai, W. C.; Kuo, C. H.; Wang, C. K.; Lin, Y. C.; Hsu, Y. P.; Shei, S. C.; Lo, H. M.; J. C. Ke; J. K. Sheu
國立成功大學	2003	Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer	Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi
國立成功大學	2003	Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers	Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen
國立成功大學	2003	MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates	Chang, S. J.; Su, Y. K.; Lin, Y. C.; Chuang, R. W.; Chang, C. S.; �Sheu, �Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H.
國立成功大學	2003	Low-dark-current GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layer	Chang, S. J.; Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Su, Y. K.; Chang, C. S.; Kao, C. J.; Chi, G. C.; Tsai, J. M.
國立成功大學	2003	Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer	Kuo, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; �Sheu, �Jinn-Kong; Tsai, J. M.
國立成功大學	2003	Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer	�Sheu, �Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, G. C.; Chang, S. J.; Su, Y. K.; Tsai, J. M.
國立成功大學	2003	Nitride-based near UV MQW LEDs with AlGaN barrier layers	Chang, S. J.; Kuo, C. H.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Chen, J. F.; Tsai, J. M.
國立成功大學	2002	GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes	Chen, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; Tsai, J. M.

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