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Showing items 76-86 of 86 (4 Page(s) Totally)
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| 國立成功大學 |
2002 |
Low dark current GaN-based PIN ultraviolet photodetector with AlGaN/GaN superlattice p-layer structure
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Yeh, L. S.; Lee, M. L.; �Sheu, �Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, G. C.; Chang, S. J.; Su, Y. K. |
| 國立成功大學 |
2001 |
Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer
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�Sheu, �Jinn-Kong; Tsai, J. M.; Shei, S. C.; Lai, W. C.; Wen, T. C.; Kuo, C. H.; Su, Y. K.; Chang, S. J.; Chi, G. C. |
| 國立成功大學 |
1999-12 |
GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy
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Chang, J. R.; Su, Y. K.; Lu, Yan-Ten |
| 國立成功大學 |
1999-02 |
Determination of the valence-band offset for GaInAsSb/InP heterostructure
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Chang, J. R.; Su, Y. K.; Lu, Y. T.; Jaw, D. H.; Shiao, H. P.; Lin, W. |
| 國立成功大學 |
1999 |
Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy
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Chang, J. R.; Su, Y. K.; Lin, C. L.; Wu, K. M.; Huang, W. C.; Lu, Y. T.; Jaw, D. H.; Li, W. L.; Chen, S. M. |
| 國立高雄應用科技大學 |
1998-12 |
8~14 μm Normal Incident Optical Transition in GaSb/InAs Superlattices
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YU, C.F.;Chen, S.M.;Su, Y.K. |
| 國立臺灣大學 |
1998 |
Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs
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Kuo, C. W.; Su, Y. K.; Lin, H. H.; Tsia, C. Y. |
| 國立成功大學 |
1997-12 |
AlGaInP multiquantum well light-emitting diodes
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Chang, Shoou-Jinn; Chang, C. S.; Su, Y. K.; Chang, P. T.; Wu, Y. R.; Huang, K. H.; Chen, T. P. |
| 國立成功大學 |
1996 |
Doping Effects on Normal Incidence Interband and Intersubband Optical Tranistioin on GaSb/InAs Superlattices
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Chen, S. M.; Su, Y. K.; Lu, Yan-Ten |
| 國立成功大學 |
1996 |
8-14 m m Normal Incident Optical Transition in GaSb/InAs Superlattices
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Chen, S. M.; Su, Y. K.; Lu, Yan-Ten |
| 國立成功大學 |
1993 |
Effects of elastic strain on the band offset and effetcive mass of strained InGaSb epilayers
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Chen, S. M.; Su, Y. K.; Lu, Yan-Ten |
Showing items 76-86 of 86 (4 Page(s) Totally)
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